Single FETs, MOSFETs DMG3402LQ-13 product image

DMG3402LQ-13

$0.09
  • Description:MOSFET N-CH 30V 4A SOT23
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)

SKU:30244cab63ea Category: Brand:

  
  • Quantity
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DMG3402LQ-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 30V 4A SOT23. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMG3402LQ-13

  • Description:MOSFET N-CH 30V 4A SOT23
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):2.5V, 10V
  • Rds On (Max) @ Id, Vgs:52mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id:1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:11.7 nC @ 10 V
  • Vgs (Max):±12V
  • Input Capacitance (Ciss) (Max) @ Vds:464 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):1.4W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:SOT-23-3
  • Package / Case:TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for DMG3402LQ-13

DMG3402LQ-13

Single FETs, MOSFETs Overview

The DMG3402LQ-13 is an N-channel enhancement mode field effect transistor manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 30V and a continuous drain current of 4A at +25°C. The device offers low on-resistance, specified as 52mΩ at VGS=10V and ID=4A, or 65mΩ at VGS=4.5V and ID=3A. It operates within a temperature range of -55°C to +150°C and utilizes a SOT-23 surface-mount package.

Single FETs, MOSFETs Feature Summary

  • Totally lead-free and fully RoHS compliant with halogen and antimony free green device construction
  • Qualified to AEC-Q101 standards for high reliability applications
  • Features low gate threshold voltage and fast switching speed capabilities
  • PPAP capable for automotive production requirements

Single FETs, MOSFETs Applications

  • DC-DC Converters
  • Power Management Functions
  • Battery Operated Systems
  • Solid-State Relays

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10000-unit tape and reel packaging configuration. Confirm that the component meets all required environmental compliance standards including RoHS directives and AEC-Q101 qualification levels before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component when a single N-channel MOSFET with a 30V breakdown voltage is required. Ensure the application drive voltage supports the specified on-resistance thresholds at either 10V or 4.5V gate-source voltages. Verify thermal management requirements align with the 1.4W power dissipation rating in the SOT-23 package.

Single FETs, MOSFETs Part Context

This part belongs to the DMG3402LQ series of N-channel enhancement mode field effect transistors. It is designed for general-purpose switching applications requiring low on-resistance and fast switching characteristics. The device is housed in a standard SOT-23 surface mount case suitable for automated assembly processes.

Single FETs, MOSFETs Replacement Considerations

Consult official documentation for confirmed substitute part numbers. Cross-referencing requires matching electrical parameters such as BVDSS, ID, and RDS(ON) ratings alongside compatible package dimensions and pin configurations.

Single FETs, MOSFETs FAQ

What is the maximum drain-source voltage rating?

The maximum drain-source voltage (BVDSS) is rated at 30V.

Is the device qualified for automotive applications?

Yes, the device is qualified to AEC-Q101 standards and is PPAP capable.

What is the operating temperature range?

The junction and storage temperature range is from -55°C to +150°C.

DMG3402LQ-13DMG3402LQ-13
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