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DMG3402LQ-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 30V 4A SOT23. Review the specifications below when checking this part for your BOM.
The DMG3402LQ-13 is an N-channel enhancement mode field effect transistor manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 30V and a continuous drain current of 4A at +25°C. The device offers low on-resistance, specified as 52mΩ at VGS=10V and ID=4A, or 65mΩ at VGS=4.5V and ID=3A. It operates within a temperature range of -55°C to +150°C and utilizes a SOT-23 surface-mount package.
Verify the specific ordering suffix '-13' corresponds to the 10000-unit tape and reel packaging configuration. Confirm that the component meets all required environmental compliance standards including RoHS directives and AEC-Q101 qualification levels before finalizing procurement specifications.
Select this component when a single N-channel MOSFET with a 30V breakdown voltage is required. Ensure the application drive voltage supports the specified on-resistance thresholds at either 10V or 4.5V gate-source voltages. Verify thermal management requirements align with the 1.4W power dissipation rating in the SOT-23 package.
This part belongs to the DMG3402LQ series of N-channel enhancement mode field effect transistors. It is designed for general-purpose switching applications requiring low on-resistance and fast switching characteristics. The device is housed in a standard SOT-23 surface mount case suitable for automated assembly processes.
Consult official documentation for confirmed substitute part numbers. Cross-referencing requires matching electrical parameters such as BVDSS, ID, and RDS(ON) ratings alongside compatible package dimensions and pin configurations.
The maximum drain-source voltage (BVDSS) is rated at 30V.
Yes, the device is qualified to AEC-Q101 standards and is PPAP capable.
The junction and storage temperature range is from -55°C to +150°C.
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