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DMG3415U-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET P-CH 20V 4A SOT23-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMG3415U-7
- Description：MOSFET P-CH 20V 4A SOT23-3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：39mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：9.1 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：294 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：900mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
Single FETs, MOSFETs datasheet and documents for DMG3415U-7
Single FETs, MOSFETs Overview
The DMG3415U-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -20V drain-source voltage rating and a continuous drain current of -4.0A at +25°C. The device offers a maximum on-resistance of 42.5mΩ at VGS = -4.5V and 71mΩ at VGS = -1.8V. Total gate charge is typically 9.1nC. It operates within a temperature range of -55°C to +150°C and dissipates up to 0.9W. The component is housed in an SOT23 surface-mount package.
Single FETs, MOSFETs Feature Summary
- Low on-state resistance for high efficiency power management
- Fast switching speed with low input capacitance
- ESD protection rated up to 3kV
- Qualified to AEC-Q101 standards for automotive reliability
Single FETs, MOSFETs Applications
- DC-DC Converters
- Power Management Functions
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix, as 'DMG3415U-7' denotes standard compliance packaged in 3,000 units per tape and reel. Confirm that the standard version meets project requirements, noting that the 'Q' suffix indicates AEC-Q101 qualification. Ensure the design accommodates the manufacturer's recommendation to use alternative components for new designs.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring a compact P-channel switch with low on-resistance. Consider the thermal characteristics, specifically the junction-to-ambient resistance, when designing heat dissipation strategies. Verify that the gate drive voltage aligns with the specified thresholds for optimal RDS(ON) performance. Check if automotive-grade qualification is necessary before choosing between standard and qualified variants.
Single FETs, MOSFETs Part Context
This part belongs to the DMG3415 series of P-channel MOSFETs from Diodes Incorporated. It is designed to minimize on-state resistance while maintaining superior switching performance. The datasheet explicitly states that this component is not recommended for new designs and suggests using the DMP2045U instead.
Single FETs, MOSFETs Replacement Considerations
The datasheet recommends using the DMP2045U as a replacement for new designs.
Single FETs, MOSFETs FAQ
Is the DMG3415U-7 suitable for new designs?
No, the datasheet explicitly marks this component as 'Not Recommended for New Design' and suggests using the DMP2045U.
What is the difference between DMG3415U-7 and DMG3415UQ-7?
The DMG3415UQ-7 is qualified to AEC-Q101 standards and is PPAP capable, whereas the DMG3415U-7 is the standard version. Electrically and thermally, they are the same unless otherwise specified.
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