DMG3415UQ-7

$0.44

Description：MOSFET BVDSS: 8V~24V SOT23 T&R 3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:62933b88c7f2 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMG3415UQ-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET BVDSS: 8V~24V SOT23 T&R 3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMG3415UQ-7

Description：MOSFET BVDSS: 8V~24V SOT23 T&R 3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：42.5mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：9.1 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：294 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：900mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for DMG3415UQ-7

DMG3415UQ-7

Single FETs, MOSFETs Overview

The DMG3415UQ-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of -20V and a continuous drain current of -4.0A at +25°C. The device exhibits a maximum on-resistance of 42.5mΩ at VGS = -4.5V and 71mΩ at VGS = -1.8V. Total gate charge is typically 9.1nC. It operates within an ambient temperature range of -55°C to +150°C with a total power dissipation of 0.9W. The component is housed in a SOT23 package.

Single FETs, MOSFETs Feature Summary

Designed for high efficiency power management applications through minimized on-state resistance and superior switching performance.
Qualified to AEC-Q101 standards for automotive reliability, capable of PPAP processes in IATF 16949 certified facilities.
Includes integrated ESD protection up to 3kV and low input/output leakage characteristics.

Single FETs, MOSFETs Applications

DC-DC Converters
Power Management Functions

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm compliance with RoHS directives and Halogen-free requirements as specified in the manufacturer's documentation. Ensure the design accommodates the 'Not Recommended for New Design' status indicated in the datasheet.

Single FETs, MOSFETs Selection Notes

Select this component for circuits requiring a -20V P-channel switch with low conduction losses. Evaluate thermal constraints carefully due to the 0.9W power dissipation limit in the SOT23 package. Consider the gate threshold voltage variations across the operating temperature range when designing drive circuits.

Single FETs, MOSFETs Part Context

This part belongs to the DMG series of P-channel MOSFETs from Diodes Incorporated. It utilizes silicon technology and is packaged in a standard SOT-23 surface mount case. The product line targets general-purpose switching and power management tasks where compact size and automotive qualification are required.