DMG3420U-7

$0.29

Description：MOSFET N-CH 20V 5.47A SOT23-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:8e8791aecc3c Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMG3420U-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 5.47A SOT23-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMG3420U-7

Description：MOSFET N-CH 20V 5.47A SOT23-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：5.47A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 10V
Rds On (Max) @ Id, Vgs：29mOhm @ 6A, 10V
Vgs(th) (Max) @ Id：1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：5.4 nC @ 4.5 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：434.7 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：740mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for DMG3420U-7

DMG3420U-7

Single FETs, MOSFETs Overview

The DMG3420U-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 20 V and a continuous drain current (ID) of 5.47 A at +25°C. The device exhibits a static drain-source on-resistance (RDS(ON)) of 29 mΩ at VGS = 10V and 35 mΩ at VGS = 4.5V. Total gate charge (Qg) is 5.4 nC, with turn-on delay time of 6.5 ns and turn-off delay time of 21.6 ns. Power dissipation is rated at 0.74 W, operating within a temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Low on-state resistance for high efficiency power management
Fast switching speed with low input capacitance
Low input/output leakage characteristics
Totally lead-free and fully RoHS compliant

Single FETs, MOSFETs Applications

General purpose interfacing switch
Power management functions

Single FETs, MOSFETs Procurement Notes

Verify the component datasheet revision and specific ordering suffixes against official Diodes Incorporated documentation before procurement. Confirm that the SOT-23 package dimensions and marking codes align with your manufacturing requirements. Ensure compliance with environmental directives such as RoHS 3 and REACH standards as specified in the manufacturer's quality definitions.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring a compact N-channel MOSFET with low RDS(ON) in a small surface-mount footprint. Consider the thermal resistance and power dissipation limits when designing heat dissipation strategies. Evaluate the gate threshold voltage and total gate charge to ensure compatibility with the intended drive circuitry and switching frequency requirements.

Single FETs, MOSFETs Part Context

The DMG3420U-7 belongs to the DMG3420 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in a standard SOT-23 case. The product is designed to minimize on-state resistance while maintaining superior switching performance, targeting general-purpose switching and power management applications.