DMG4413LSS-13

$0.78

Description：MOSFET P-CH 30V 10.5A 8SOP
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:804fddbc8869 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMG4413LSS-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET P-CH 30V 10.5A 8SOP. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMG4413LSS-13

Description：MOSFET P-CH 30V 10.5A 8SOP
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：10.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：7.5mOhm @ 13A, 10V
Vgs(th) (Max) @ Id：2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：46 nC @ 5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4965 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.7W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SO
Package / Case：8-SOIC (0.154", 3.90mm Width)

Single FETs, MOSFETs datasheet and documents for DMG4413LSS-13

DMG4413LSS-13

Single FETs, MOSFETs Overview

The DMG4413LSS is a P-channel enhancement mode MOSFET designed for high-efficiency power management. It features a -30V drain-source voltage rating and low on-state resistance of 7.5mΩ at VGS=-10V, supporting a continuous drain current of -12A. The device utilizes an SO-8 surface-mount package with a maximum junction temperature of +150°C. Key electrical parameters include a gate threshold voltage range of -1.1V to -2.1V and a total gate charge of 46nC. It is qualified to AEC-Q101 standards.

Single FETs, MOSFETs Feature Summary

Low on-resistance design minimizes conduction losses while maintaining superior switching performance.
Low input capacitance enables fast switching speeds suitable for high-frequency applications.
Qualified to AEC-Q101 standards ensuring high reliability for automotive environments.
Totally lead-free and fully RoHS compliant, also halogen and antimony free.

Single FETs, MOSFETs Applications

Backlighting
Power Management Functions
DC-DC Converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the tape and reel packaging configuration containing 2500 units per reel. Confirm that the component meets the required environmental specifications, including being halogen and antimony free. Ensure the application design accounts for the 'Not Recommended for New Design' status by evaluating the recommended replacement part DMP3007LSS for future projects.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a P-channel MOSFET with a -30V breakdown voltage and high current handling capabilities up to -12A. The low RDS(ON) makes it suitable for efficient power switching in DC-DC converters. Consider the SO-8 package dimensions for PCB layout constraints. Note that the datasheet explicitly recommends using the DMP3007LSS for new designs instead.

Single FETs, MOSFETs Part Context

This component belongs to the DMG series of P-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It is specifically engineered to balance low on-state resistance with fast switching characteristics. The device is housed in a standard SO-8 plastic case with matte tin annealed terminals over a copper lead frame, suitable for surface mount assembly processes.

Single FETs, MOSFETs Replacement Considerations

The datasheet explicitly states 'NOT RECOMMENDED FOR NEW DESIGN' and advises using the DMP3007LSS as the alternative part number.

Single FETs, MOSFETs FAQ

Is the DMG4413LSS qualified for automotive applications?

Yes, the device is qualified to AEC-Q101 standards for high reliability. An automotive-compliant version is also available under the separate part number DMG4413LSSQ.