DMG4466SSSL-13

$0.56

Description：MOSFET N-CH 30V 10A 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:0e4b0b9848d6 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

DMG4466SSSL-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 30V 10A 8SO. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMG4466SSSL-13

Description：MOSFET N-CH 30V 10A 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：23mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：17 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：478.9 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.42W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SO
Package / Case：8-SOIC (0.154", 3.90mm Width)

Single FETs, MOSFETs datasheet and documents for DMG4466SSSL-13

DMG4466SSSL-13

Single FETs, MOSFETs Overview

The DMG4466SSSL-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 30V drain-source breakdown voltage and a maximum continuous drain current of 10A at 25°C, with a pulsed current rating of 60A. The device exhibits a low on-state resistance of 23mΩ at VGS=10V and 33mΩ at VGS=4.5V. Packaged in an SO-8 surface-mount case, it supports a power dissipation of 1.42W and operates within a temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Designed for high efficiency power management applications through minimized on-state resistance and superior switching performance.
Qualified to AEC-Q101 standards for high reliability in automotive environments.
Totally lead-free, fully RoHS compliant, and halogen and antimony free.
Features low input capacitance, fast switching speed, and low gate resistance.

Single FETs, MOSFETs Applications

Backlighting
Power Management Functions
DC-DC Converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix 'L-13' corresponds to the tape and reel packaging configuration containing 2500 units per reel. Confirm that the component meets the required environmental standards, specifically RoHS compliance and the absence of halogens and antimony. Ensure the SO-8 package dimensions align with the suggested pad layout provided in the manufacturer's documentation before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component when a single N-channel MOSFET with a 30V rating and up to 10A continuous current capability is required. The low on-resistance makes it suitable for efficient power conversion. Consider the thermal resistance and power dissipation limits relative to the expected ambient operating conditions. Verify that the gate threshold voltage characteristics match the driving circuit requirements for optimal switching performance.

Single FETs, MOSFETs Part Context

This part belongs to the DMG4466 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in an SO-8 surface-mount package. The device is designed to balance low conduction losses with fast switching speeds, targeting applications where space constraints and thermal efficiency are critical design factors.