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DMG4712SSS-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 30V 11.2A 8SOP. Review the specifications below when checking this part for your BOM.
The DMG4712SSS-13 is a dual N-channel enhancement mode MOSFET with an integrated Schottky diode, utilizing Diodes Incorporated’s Monolithic DIOFET technology. It features a 30V drain-source voltage rating and a continuous drain current of 11.2A at 25°C. The device offers a low on-resistance of 10mΩ at VGS=10V and 15.4mΩ at VGS=4.5V. Packaged in an SO-8 case, it supports a junction temperature range from -55°C to +150°C and includes UIS and RG testing for reliability.
Verify component authenticity through authorized channels as the datasheet explicitly states this part is not recommended for new design with no alternate part provided. Confirm package integrity and marking codes (G4712SS) match official specifications. Ensure compliance with RoHS and environmental requirements if applicable to your manufacturing process.
Select this component for applications requiring a combined MOSFET and Schottky diode solution in an SO-8 package. Consider the specific gate threshold voltage requirements and thermal management needs given the 1.55W power dissipation limit. Evaluate the trade-off between low on-resistance and switching speed based on circuit frequency requirements.
This component belongs to the DMG series of MOSFETs from Diodes Incorporated. It represents a monolithic integration approach combining power switching and rectification functions. The device is designed for high-density applications where space and efficiency are critical constraints.
The datasheet explicitly states: NOT RECOMMENDED FOR NEW DESIGN - NO ALTERNATE PART. No verified substitute part numbers are available within the official documentation.
No, the datasheet explicitly states that there is no alternate part for this component.
The maximum continuous drain current is 11.2A at an ambient temperature of +25°C.
Yes, the device has been tested for Unclamped Inductive Switching (UIS) and Gate Resistance (RG).
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