Single FETs, MOSFETs DMG4712SSS-13 product image

DMG4712SSS-13

$0.77
  • Description:MOSFET N-CH 30V 11.2A 8SOP
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT),Cut Tape (CT)

SKU:a15b107df2a1 Category: Brand:

  
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DMG4712SSS-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 30V 11.2A 8SOP. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMG4712SSS-13

  • Description:MOSFET N-CH 30V 11.2A 8SOP
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:11.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:14mOhm @ 11.2A, 10V
  • Vgs(th) (Max) @ Id:2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:45.7 nC @ 10 V
  • Vgs (Max):±12V
  • Input Capacitance (Ciss) (Max) @ Vds:2296 pF @ 15 V
  • FET Feature:Schottky Diode (Body)
  • Power Dissipation (Max):1.55W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:8-SO
  • Package / Case:8-SOIC (0.154", 3.90mm Width)

Single FETs, MOSFETs datasheet and documents for DMG4712SSS-13

DMG4712SSS-13

Single FETs, MOSFETs Overview

The DMG4712SSS-13 is a dual N-channel enhancement mode MOSFET with an integrated Schottky diode, utilizing Diodes Incorporated’s Monolithic DIOFET technology. It features a 30V drain-source voltage rating and a continuous drain current of 11.2A at 25°C. The device offers a low on-resistance of 10mΩ at VGS=10V and 15.4mΩ at VGS=4.5V. Packaged in an SO-8 case, it supports a junction temperature range from -55°C to +150°C and includes UIS and RG testing for reliability.

Single FETs, MOSFETs Feature Summary

  • Integrates a high-density UMOS N-channel MOSFET with a Schottky barrier diode to increase conversion efficiency.
  • Utilizes Monolithic DIOFET technology to achieve low leakage current at high temperatures and fast switching speeds.
  • Qualified to AEC-Q101 standards for high reliability and tested for Unclamped Inductive Switching (UIS) and Gate Resistance (RG).
  • Totally lead-free, fully RoHS compliant, and halogen/antimony free.

Single FETs, MOSFETs Applications

  • High-efficiency power conversion designs requiring integrated body-diode alternatives.
  • Automotive electronic systems demanding AEC-Q101 qualified components.
  • Applications necessitating fast switching speeds and low input capacitance.

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized channels as the datasheet explicitly states this part is not recommended for new design with no alternate part provided. Confirm package integrity and marking codes (G4712SS) match official specifications. Ensure compliance with RoHS and environmental requirements if applicable to your manufacturing process.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring a combined MOSFET and Schottky diode solution in an SO-8 package. Consider the specific gate threshold voltage requirements and thermal management needs given the 1.55W power dissipation limit. Evaluate the trade-off between low on-resistance and switching speed based on circuit frequency requirements.

Single FETs, MOSFETs Part Context

This component belongs to the DMG series of MOSFETs from Diodes Incorporated. It represents a monolithic integration approach combining power switching and rectification functions. The device is designed for high-density applications where space and efficiency are critical constraints.

Single FETs, MOSFETs Replacement Considerations

The datasheet explicitly states: NOT RECOMMENDED FOR NEW DESIGN - NO ALTERNATE PART. No verified substitute part numbers are available within the official documentation.

Single FETs, MOSFETs FAQ

Is there an alternate part number recommended for the DMG4712SSS?

No, the datasheet explicitly states that there is no alternate part for this component.

What is the maximum continuous drain current at 25°C?

The maximum continuous drain current is 11.2A at an ambient temperature of +25°C.

Does the device include protection against inductive switching events?

Yes, the device has been tested for Unclamped Inductive Switching (UIS) and Gate Resistance (RG).

DMG4712SSS-13DMG4712SSS-13
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