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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 7.5A 8SOP
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：7.5A (Ta)
- Rds On (Max) @ Id, Vgs：16mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id：1.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：8.56nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：798pF @ 10V
- Power - Max：1.17W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOP
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMG4800LSDQ-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 30V and operates within an ambient temperature range of -55°C to +150°C. The device provides a continuous drain current (ID) of up to 7.5A at steady state with a 25°C ambient temperature, or 9.8A for short pulses under the same conditions. Static drain-source on-resistance (RDS(ON)) is rated at a maximum of 16mΩ at VGS = 10V and ID = 9A, and 22mΩ at VGS = 4.5V and ID = 7A. Total power dissipation reaches 1.5W in steady state, supported by a thermal resistance junction-to-case of 14.5°C/W.
Feature Summary
- Dual N-channel configuration housed in a compact SO-8 package
- Engineered for low on-state resistance to minimize conduction losses
- Optimized gate charge characteristics to reduce switching losses
- Qualified to JEDEC standards for high reliability applications
Applications
- Backlighting circuits
- Power management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix against official manufacturer documentation before procurement. Confirm that the component meets all required environmental and safety certifications for the intended deployment environment. Ensure compatibility with existing assembly processes and soldering profiles.
Selection Notes
Evaluate the total power dissipation limits relative to the expected operating ambient temperature. Verify that the gate drive voltage aligns with the specified thresholds for optimal RDS(ON) performance. Consider the thermal resistance values when designing the PCB copper layout to ensure adequate heat dissipation during continuous operation.
Part Context
This component belongs to the DMG4800LSD series of dual N-channel enhancement mode MOSFETs. It is designed to balance low on-state resistance with superior switching performance. The product is fully RoHS compliant and halogen-free, targeting efficiency-focused power management designs.
Replacement Considerations
For automotive applications requiring specific change control, refer to the related automotive grade parts with Q-suffixes. Consult the manufacturer's automotive product listing for qualified alternatives meeting AEC-Q standards.
