DMG4812SSS-13

$0.42

Description：MOSFET N-CH 30V 8A 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:2de84d15c9d5 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMG4812SSS-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 30V 8A 8SO. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMG4812SSS-13

Description：MOSFET N-CH 30V 8A 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：15mOhm @ 10.7A, 10V
Vgs(th) (Max) @ Id：2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：18.5 nC @ 10 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：1849 pF @ 15 V
FET Feature：Schottky Diode (Body)
Power Dissipation (Max)：1.54W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SO
Package / Case：8-SOIC (0.154", 3.90mm Width)

Single FETs, MOSFETs datasheet and documents for DMG4812SSS-13

DMG4812SSS-13

Single FETs, MOSFETs Overview

The DMG4812SSS-13 is a dual N-channel enhancement mode MOSFET with an integrated Schottky diode in an SO-8 package. It features a drain-source breakdown voltage of 30V and a maximum continuous drain current of 10.7A at 25°C. The static drain-source on-resistance is 15mΩ at VGS=10V and 18.5mΩ at VGS=4.5V. Total gate charge is 18.5nC at VGS=4.5V and 43nC at VGS=10V. Operating temperature ranges from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

DIOFET technology monolithically integrates a MOSFET and Schottky diode to minimize conduction losses and body diode switching losses.
Low gate capacitance ratio reduces the risk of shoot-through or cross-conduction currents at high frequencies.
Rated for avalanche ruggedness with specified IAR and EAR limits.
Qualified to AEC-Q101 standards for automotive reliability.

Single FETs, MOSFETs Applications

DC-DC Converters
Power Management Functions

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized Diodes Incorporated channels. Confirm RoHS compliance and lead-free status against current regulatory directives. Ensure storage conditions adhere to moisture sensitivity level 1 requirements. Validate that the SO-8 tape and reel packaging matches specific board assembly equipment specifications before finalizing orders.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring low RDS(ON) and reduced body diode reverse recovery charge. Evaluate thermal resistance values based on specific PCB copper coverage and ambient temperature constraints. Consider the integrated Schottky diode for synchronous rectification designs where minimizing forward voltage drop is critical for overall system efficiency.

Single FETs, MOSFETs Part Context

This device belongs to the DMG series of power MOSFETs manufactured by Diodes Incorporated. It utilizes a patented DIOFET process to combine discrete functions into a single die. The product is designed for high-efficiency power management systems, specifically targeting automotive and industrial environments requiring robust switching performance.