DMG4932LSD-13

Overview

The DMG4932LSD-13 is an asymmetrical dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates two distinct N-channel MOSFETs and a Schottky barrier diode within a single SO-8 surface-mount package utilizing DIOFET technology. The device features a drain-source voltage rating of 30V for both channels, with continuous drain currents of 9.5A at 25°C. Q1 exhibits a maximum on-resistance of 15mΩ at VGS=10V and ID=9A, while Q2 shows a maximum of 23mΩ under similar conditions. Total gate charge reaches 42nC at 10V drive. Thermal resistance from junction to ambient is 107°C/W, supporting a power dissipation of 1.19W.

Feature Summary

• Asymmetrical dual N-channel configuration integrating a Schottky barrier diode via Monolithic DIOFET technology
• High conversion efficiency achieved through low on-resistance and low input capacitance characteristics
• Fast switching speed supported by optimized gate charge parameters
• Qualified to AEC-Q101 standards ensuring high reliability in automotive applications

Applications

• Automotive power management circuits requiring high reliability
• DC-DC converter topologies utilizing integrated body-diode or external Schottky options
• Motor control systems benefiting from fast switching and low leakage

Procurement Notes

Verify component authenticity through authorized distribution channels as the datasheet explicitly states this part is not recommended for new design and has no alternate part. Confirm RoHS compliance and lead-free status against current regulatory requirements before integration into manufacturing processes.

Selection Notes

Select this component only for legacy designs where the specific asymmetrical electrical characteristics match existing circuit requirements. Evaluate thermal performance carefully given the 1.19W power dissipation limit in the SO-8 package. Ensure gate drive voltages align with the specified threshold and on-resistance test conditions for optimal performance.

Part Context

This component belongs to the DMG4932 series of asymmetrical dual MOSFETs produced by Diodes Incorporated. It represents a specialized discrete semiconductor solution combining power switching and rectification functions. The product line targets applications demanding compact packaging and enhanced efficiency through integrated monolithic technology.

Replacement Considerations

The datasheet explicitly states there is no alternate part available for this component. Designers must source remaining inventory or redesign the circuit using different components if this part becomes unavailable.

FAQ

What is the difference between Q1 and Q2 in the DMG4932LSD?

Q1 and Q2 are asymmetrical N-channel MOSFETs with different gate-source voltage ratings. Q1 has a VGSS rating of ±12V, while Q2 supports ±25V. Their on-resistance values also differ under identical test conditions.

Is the DMG4932LSD suitable for new designs?

No, the datasheet clearly marks the DMG4932LSD as 'Not Recommended for New Design' and indicates that there is no alternate part available.

What technology is used to integrate the Schottky diode?

The device utilizes Diodes Incorporated’s Monolithic DIOFET Technology to increase conversion efficiency by integrating the Schottky barrier diode with the MOSFET structure.