DMG4N60SCT

$0.48

Description：MOSFET N-CH 600V 4.5A TO220AB
Series：-
Mfr：Diodes Incorporated
Package：Tube

SKU:a08c698aa815 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

DMG4N60SCT is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 600V 4.5A TO220AB. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMG4N60SCT

Description：MOSFET N-CH 600V 4.5A TO220AB
Series：-
Mfr：Diodes Incorporated
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：2.5Ohm @ 2A, 10V
Vgs(th) (Max) @ Id：4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：14.3 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：532 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：113W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220-3
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for DMG4N60SCT

DMG4N60SCT

Single FETs, MOSFETs Overview

The DMG4N60SCT is an N-channel enhancement mode MOSFET from Diodes Incorporated, designed for high-efficiency power management. It features a drain-source voltage (BVDSS) of 600V and a continuous drain current (ID) of 4.5A at +25°C case temperature. The static drain-source on-resistance (RDS(ON)) is rated at 2.5Ω maximum at VGS = 10V and ID = 2A. Total power dissipation reaches 113W at +25°C case temperature. The device operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Low input capacitance for fast switching performance
High breakdown voltage rating suitable for demanding power applications
Low input and output leakage currents
Lead-free finish with RoHS compliance

Single FETs, MOSFETs Applications

Motor Control
Backlighting
DC-DC Converters
Power Management Functions

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision against your design requirements before procurement. Confirm that the TO220AB packaging aligns with your thermal management strategy and PCB layout constraints. Ensure gate drive voltages remain within the specified limits to maintain optimal RDS(ON) performance and prevent gate oxide damage during operation.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring high voltage blocking capabilities combined with moderate current handling in a through-hole package. Evaluate the thermal resistance characteristics to ensure adequate heat sinking is implemented for sustained operation. Consider the gate charge parameters when selecting compatible driver ICs to optimize switching speeds and minimize transition losses.

Single FETs, MOSFETs Part Context

This part belongs to Diodes Incorporated's discrete semiconductor portfolio, specifically within their MOSFET category. It utilizes a TO220AB plastic case with matte tin terminals annealed over a copper leadframe. The device is manufactured using green molding compound that is halogen and antimony free, adhering to environmental safety standards for electronic components.

Single FETs, MOSFETs Replacement Considerations

Consult official manufacturer substitution guides for verified alternatives. Cross-referencing requires matching BVDSS, ID, RDS(ON), and package dimensions to ensure functional compatibility without redesigning the host circuit board or thermal interface.