DMG6302UDW-13

Overview

The DMG6302UDW-13 is a dual P-channel enhancement mode MOSFET manufactured by Diodes Incorporated in an SOT-363 package. It features a drain-source voltage (BVDSS) of -25V and a continuous drain current (ID) of -150mA at VGS = -4.5V. The maximum on-resistance (RDS(ON)) is 10Ω at VGS = -4.5V and 13Ω at VGS = -2.7V. Gate-source voltage (VGSS) is rated at ±8V, with a gate threshold voltage (VGS(TH)) ranging from -0.65V to -1.5V. Total gate charge (Qg) is typically 0.34nC. Power dissipation is 310mW on FR-4 PCB with minimum pads, or 380mW on high copper coverage boards. Operating temperature ranges from -55°C to +150°C.

Feature Summary

• Dual P-channel configuration integrated into a compact SOT-363 surface-mount package
• Optimized for low on-state resistance while maintaining fast switching performance
• Low gate threshold voltage enabling efficient drive from standard logic levels
• ESD protected structure compliant with RoHS and halogen-free standards

Applications

• General purpose interfacing switch
• Power management functions
• Analog switch applications

Procurement Notes

Verify the ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging format specified in the datasheet. Confirm that the component meets environmental requirements such as being lead-free, halogen-free, and antimony-free. Ensure the application design accounts for the thermal resistance values provided for different PCB copper coverage scenarios.

Selection Notes

Select this component when a dual P-channel MOSFET is required in a small footprint. Evaluate the RDS(ON) specifications against the load current requirements at the intended gate drive voltage (-2.7V or -4.5V). Consider the power dissipation limits and thermal resistance characteristics relative to the PCB layout and ambient operating conditions.

Part Context

This part belongs to the DMG series of dual P-channel enhancement mode MOSFETs from Diodes Incorporated. It shares the SOT-363 case style with other devices in the family but is distinguished by its specific voltage and current ratings. The '-13' suffix indicates a specific tape and reel quantity for manufacturing integration.

Replacement Considerations

The datasheet lists the DMG6302UDW-7 as an equivalent part number within the same product line, differing only in the tape and reel packaging quantity (3,000 units versus 10,000 units). Verify pinout compatibility and electrical parameters before substituting with other dual P-channel MOSFETs from different manufacturers.

FAQ

What is the maximum continuous drain current for the DMG6302UDW-13?

The maximum continuous drain current is -150mA when VGS is -4.5V and the device is mounted on a 1” x 1” FR-4 PCB with high coverage 2oz copper.

How does the on-resistance vary with gate voltage?

The maximum RDS(ON) is 10Ω at VGS = -4.5V and increases to 13Ω at VGS = -2.7V, both measured at ID = -0.14A and -0.05A respectively.

Is the DMG6302UDW-13 suitable for automotive applications?

Standard production is not explicitly qualified for automotive use. For automotive applications requiring AEC-Q100/101/200 qualification and IATF 16949 manufacturing, customers must contact Diodes Incorporated directly.