DMG6302UDW-7

Overview

The DMG6302UDW-7 is a dual P-channel enhancement mode MOSFET manufactured by Diodes Incorporated in an SOT-363 surface-mount package. It features a drain-source voltage (BVDSS) of -25V and a continuous drain current (ID) of -150mA at +25°C with VGS = -4.5V. The maximum on-resistance (RDS(ON)) is 10Ω at VGS = -4.5V and 13Ω at VGS = -2.7V. Key electrical parameters include a gate threshold voltage (VGS(TH)) ranging from -0.65V to -1.5V, total gate charge (Qg) of 0.34nC, and input capacitance (Ciss) of 30.7pF. Power dissipation is rated at 310mW on minimal pads and 380mW on high-copper boards, with an operating temperature range of -55°C to +150°C.

Feature Summary

• Dual P-channel configuration designed for high-efficiency power management applications
• Low on-state resistance combined with fast switching speed capabilities
• Integrated ESD protection mechanisms within the device structure
• RoHS compliant construction utilizing lead-free plating and green materials

Applications

• General purpose interfacing switch circuits
• Power management functions in portable electronics
• Analog switching applications requiring low signal distortion

Procurement Notes

Verify component authenticity through authorized Diodes Incorporated distributors or certified supply chain partners. Confirm datasheet revision DS37498 Rev. 3-2 matches physical markings. Ensure packaging specifications align with tape and reel requirements for automated assembly processes. Validate compliance with RoHS directives and halogen-free standards prior to integration into final products.

Selection Notes

Select this component when dual P-channel isolation is required in compact SOT-363 footprints. Evaluate RDS(ON) performance against specific gate drive voltages (-2.7V vs -4.5V) to ensure adequate current handling. Consider thermal resistance values based on PCB copper coverage and ambient operating conditions. Verify that the -25V breakdown voltage exceeds peak circuit transients.

Part Context

This part belongs to the DMG6302UDW series of dual P-channel MOSFETs from Diodes Incorporated. It shares the SOT-363 mechanical outline with other dual-channel variants but differs in channel type and specific electrical ratings. The product line targets space-constrained designs requiring multiple switching elements on a single substrate.

Replacement Considerations

Direct substitutes require matching dual P-channel topology, SOT-363 footprint, and compatible -25V BVDSS ratings. Verify pinout compatibility and thermal characteristics before substitution. Cross-reference specific RDS(ON) limits at intended gate drive voltages to maintain circuit performance.