DMG6601LVT-7

Overview

The DMG6601LVT-7 is a complementary pair enhancement mode MOSFET in a TSOT26 package. It integrates an N-channel device (Q1) and a P-channel device (Q2). Q1 offers a maximum drain-source voltage of 30V, with on-resistance values of 55mΩ at VGS=10V and 65mΩ at VGS=4.5V. Continuous drain current reaches 3.8A at 25°C. Q2 provides -30V breakdown, with on-resistance of 110mΩ at VGS=-10V and 142mΩ at VGS=-4.5V. Its continuous drain current is -2.5A at 25°C. The component operates within a junction temperature range of -55°C to +150°C.

Feature Summary

• Complementary N-channel and P-channel configuration for efficient power management
• Low on-state resistance optimized for high efficiency applications
• Fast switching speed supported by low input capacitance
• Qualified to AEC-Q101 standards for automotive reliability

Applications

• Backlighting circuits
• Power management functions
• DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3K tape and reel packaging format as defined in the manufacturer's documentation. Confirm that the component meets RoHS compliance and halogen-free requirements if environmental specifications are mandatory for the assembly process. Ensure the TSOT26 footprint matches the suggested pad layout dimensions provided in the datasheet.

Selection Notes

Select this component when a compact complementary pair is required for low-voltage switching applications. The logic-level gate threshold allows operation with standard drive voltages. Evaluate thermal performance based on the specified junction-to-ambient resistance values under steady-state or pulsed conditions. Verify that the required current ratings align with the specific gate drive voltage available in the target circuit design.

Part Context

This part belongs to the DMG series of complementary MOSFETs manufactured by Diodes Incorporated. It utilizes a TSOT26 surface-mount case designed for space-constrained PCB layouts. The device combines separate N-channel and P-channel enhancement mode transistors into a single package to simplify circuit design for half-bridge or load switch configurations.

Replacement Considerations

Check for direct substitutes within the same DMG series family that share identical pinouts and electrical characteristics. Verify that any alternative components maintain the same TSOT26 mechanical dimensions and lead finish specifications to ensure compatibility with existing board footprints.

FAQ

What is the maximum continuous drain current for the N-channel device?

The N-channel device (Q1) supports a maximum continuous drain current of 3.8A at an ambient temperature of +25°C.

Does the component meet automotive reliability standards?

Yes, the DMG6601LVT is qualified to AEC-Q101 standards for high reliability.

What is the typical total gate charge for the N-channel device?

The typical total gate charge for the N-channel device is 5.4nC when tested at VGS = 4.5V.