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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 3.4A TSOT26
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：3.4A, 2.8A
- Rds On (Max) @ Id, Vgs：60mOhm @ 3.1A, 10V
- Vgs(th) (Max) @ Id：2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：13nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：400pF @ 15V
- Power - Max：840mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：TSOT-26
- Grade：-
- Qualification：-
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Overview
The DMG6602SVTQ-7 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates an N-channel and a P-channel device in a single TSOT26 package. The N-channel Q1 offers a drain-source voltage of 30V, with on-resistance values of 60mΩ at VGS=10V and 100mΩ at VGS=4.5V. The P-channel Q2 provides -30V breakdown, with on-resistance of 95mΩ at VGS=-10V and 140mΩ at VGS=-4.5V. Continuous drain currents reach 3.4A for Q1 and -2.8A for Q2 at +25°C. Total power dissipation is rated at 0.84W at +25°C.
Feature Summary
- Complementary N-Channel and P-Channel Enhancement Mode MOSFETs
- Qualified to AEC-Q101 Standards for High Reliability
- Totally Lead-Free & Fully RoHS Compliant
- Halogen and Antimony Free Green Device
Applications
- Backlighting
- DC-DC Converters
- Power Management Functions
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging quantity and tape-and-reel specifications. Confirm that the component meets the required automotive qualification standards if intended for high-reliability applications. Ensure the selected part number matches the exact thermal and electrical requirements of the target circuit design before finalizing procurement orders.
Selection Notes
Select this component for designs requiring a matched N-P channel pair within a compact surface-mount footprint. Evaluate the gate threshold voltage and on-resistance characteristics at the intended operating gate drive levels. Consider the thermal resistance and power dissipation limits relative to the expected load current and ambient temperature conditions during operation.
Part Context
This device belongs to the DMG6602 series of complementary MOSFETs from Diodes Incorporated. It is designed to minimize on-state resistance while maintaining superior switching performance. The product line targets high-efficiency power management applications where space constraints and dual-channel functionality are critical design factors.
Replacement Considerations
DMG6602SVT-7
FAQ
What is the maximum continuous drain current for the N-channel device?
The maximum continuous drain current for the N-channel device (Q1) is 3.4A at TA = +25°C when VGS = 10V.
Is this component suitable for automotive applications?
Yes, the DMG6602SVTQ-7 is qualified to AEC-Q101 standards for high reliability and is PPAP capable.
What is the package type used for this MOSFET?
The device utilizes a TSOT26 case configuration, which is a molded plastic green molding compound with UL flammability classification rating 94V-0.
