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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 3.4A TSOT26
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel Complementary
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：3.4A (Ta), 2.8A (Ta)
- Rds On (Max) @ Id, Vgs：60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V
- Vgs(th) (Max) @ Id：2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：13nC @ 10V, 9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：400pF @ 15V, 420pF @ 15V
- Power - Max：840mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：TSOT-26
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMG6602SVTX-7 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated, housed in a TSOT-26 surface-mount package. It integrates an N-channel device (Q1) and a P-channel device (Q2). Q1 offers a drain-source voltage of 30V with on-resistance values of 60mΩ at VGS=10V and 100mΩ at VGS=4.5V. Q2 provides -30V breakdown with on-resistance of 95mΩ at VGS=-10V and 140mΩ at VGS=-4.5V. The component operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Complementary N-Channel and P-Channel configuration for efficient power management
- Optimized low on-state resistance combined with fast switching performance
- Qualified to AEC-Q101 standards for high reliability applications
Applications
- Backlighting circuits
- DC-DC converters
- Power management functions
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging details. Confirm RoHS compliance status and lead-free characteristics as defined by the manufacturer's current quality definitions. Ensure the component meets halogen and antimony-free requirements if specified for the project.
Selection Notes
Select this component for designs requiring a matched N-P channel pair in a compact footprint. Evaluate thermal dissipation capabilities based on the specific PCB copper area and ambient temperature conditions. Verify gate drive voltage levels to ensure optimal on-resistance performance for both channels.
Part Context
This part belongs to the DMG6602SVT series of complementary MOSFETs from Diodes Incorporated. It is designed to minimize on-state resistance while maintaining superior switching performance. The device utilizes a molded plastic case material classified as UL 94V-0 flammability rating.
Replacement Considerations
The datasheet explicitly recommends using DMC3071LVT as the replacement for new designs, noting that this part is not recommended for new design.
FAQ
What are the maximum continuous drain currents for the N-channel and P-channel devices?
At TA = +25°C, the N-channel (Q1) supports 3.4A at VGS = 10V, while the P-channel (Q2) supports -2.8A at VGS = -10V.
Is the DMG6602SVTX-7 suitable for automotive applications?
Yes, the device is qualified to AEC-Q101 standards for high reliability, indicating suitability for automotive environments.
What is the maximum operating junction temperature?
The maximum operating junction temperature (TJ) is +150°C.
