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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 9.5A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：9.5A
- Rds On (Max) @ Id, Vgs：16mOhm @ 9.4A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：26nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1149pF @ 10V
- Power - Max：1.28W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
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Overview
The DMG6898LSD-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (VDS) of 20 V and a continuous drain current (ID) of 9.5 A at +25°C. The device exhibits a maximum on-resistance (RDS(on)) of 16 mΩ at VGS = 4.5 V and 23 mΩ at VGS = 2.5 V. Total gate charge (Qg) is 26 nC at VGS = 10 V. Power dissipation is rated at 1.28 W, with an operating temperature range from -55°C to +150°C. It is housed in an SO-8 surface-mount package.
Feature Summary
- Qualified to AEC-Q101 standards for automotive applications
- Includes 100% unclamped inductive switching (UIS) testing
- Provides electrostatic discharge protection up to 2 kV
- Compliant with RoHS directives and free of halogen and antimony
Applications
- Backlighting circuits
- Power management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix when sourcing components. The DMG6898LSD-13 designation indicates commercial qualification and standard tape-and-reel packaging. Confirm that the required application does not mandate the DMG6898LSDQ-13 variant, which carries automotive PPAP requirements and IATF 16949 manufacturing certification. Ensure compatibility with the specified SO-8 carrier type.
Selection Notes
Select this component for low-voltage switching tasks requiring high current density within a compact footprint. Evaluate thermal constraints carefully, as power dissipation is limited to 1.28 W without significant heatsinking. Verify that the gate drive voltage meets the threshold requirements for optimal RDS(on) performance. Consider the 20 V breakdown limit when designing against transient voltage spikes in the target circuit.
Part Context
This part belongs to the DMG6898 series of dual N-channel MOSFETs. It shares the same electrical characteristics and pinout as the DMG6898LSDQ-13, differing primarily in qualification level. The series utilizes silicon technology and is designed for surface-mount assembly. It serves as a direct replacement for legacy dual MOSFETs in space-constrained designs requiring robust switching capabilities.
Replacement Considerations
The DMG6898LSDQ-13 is the primary verified alternative within the same family. It maintains identical electrical parameters and physical dimensions but includes additional automotive quality certifications. No other cross-manufacturer substitutes are confirmed in the provided documentation.
