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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 6.5A SOT26
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Common Drain
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：6.5A
- Rds On (Max) @ Id, Vgs：24mOhm @ 6.5A, 4.5V
- Vgs(th) (Max) @ Id：900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：8.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：143pF @ 10V
- Power - Max：850mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6
- Supplier Device Package：SOT-26
- Grade：-
- Qualification：-
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Overview
The DMG6968UDM-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a SOT26 surface-mount package and operates with a drain-source voltage of 20 V and a continuous drain current of 6.5 A at +25°C. The device exhibits low on-resistance, measuring 17 mΩ at VGS = 4.5V, 20 mΩ at VGS = 2.5V, and 26 mΩ at VGS = 1.8V. Total gate charge is 8.8 nC, while input capacitance is 143 pF. Thermal resistance from junction to ambient is 147 °C/W, with total power dissipation rated at 0.85 W. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Dual N-channel configuration in a compact SOT26 package
- Low RDS(ON) across various gate drive voltages
- ESD protection up to 2kV HBM
- Qualified to AEC-Q101 automotive standards
Applications
- Automotive electronic control units
- Power management circuits requiring dual switching
- Battery protection systems
Procurement Notes
Verify the component against the official Diodes Incorporated datasheet DS31758 Rev. 5-2 to confirm authenticity. Ensure the ordering suffix matches the required tape and reel packaging specifications. Check for RoHS compliance and lead-free status as documented in the manufacturer's quality definitions. Confirm that the date code aligns with the marking information provided in the datasheet.
Selection Notes
Select this component when a dual N-channel MOSFET is required in a small footprint. Consider the 20 V rating and 6.5 A continuous current capability for low-voltage switching applications. Evaluate the thermal resistance and power dissipation limits relative to the expected operating environment. Verify compatibility with available gate drive voltages given the specified RDS(ON) performance curves.
Part Context
This part belongs to the DMG6968U series of dual N-channel enhancement mode MOSFETs. It shares similar electrical characteristics with other members of the family but differs in package type and specific pinout configuration. The DMG6968UDM variant specifically utilizes the SOT26 case outline designed for high-density surface mount applications.
Replacement Considerations
Consult the manufacturer's documentation for officially confirmed substitute part numbers. Cross-referencing should be performed carefully to ensure pinout compatibility and matching electrical ratings.
