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DMG7702SFG-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 30V 12A POWERDI3333. Review the specifications below when checking this part for your BOM.
The DMG7702SFG-7 is a single N-channel enhancement mode MOSFET with an integrated Schottky diode, housed in a PowerDI3333-8 package. It features a drain-source voltage of 30V and continuous drain currents of 12A at VGS=10V or 9.5A at VGS=4.5V. The device offers low on-resistance (RDS(on)) of 10mΩ at 10V gate drive and 15mΩ at 4.5V. Operating temperatures range from -55°C to +150°C.
Verify the specific ordering suffix (-7 or -13) to confirm tape and reel quantity requirements. Confirm that the component status is acceptable for your design lifecycle, as it is marked not recommended for new design. Ensure compliance with RoHS and halogen-free specifications if required by your manufacturing process.
Select this component when a compact solution combining a power switch and freewheeling diode is needed. Consider the low RDS(on) for efficiency and the small PowerDI3333-8 footprint for space-constrained designs. Evaluate thermal performance based on the specified junction-to-ambient resistance values under your board layout conditions.
This part belongs to Diodes Incorporated's DIOFET family, which combines MOSFET and Schottky technologies. It is designed for high-efficiency power management applications where minimizing board area and conduction losses are critical priorities.
The datasheet explicitly states 'NO ALTERNATE PART'. No public substitute part numbers are confirmed for direct replacement.
The maximum continuous drain current is 12A at VGS = 10V and 9.5A at VGS = 4.5V, measured at TA = +25°C.
Yes, it integrates a Schottky diode to reduce losses due to body diode conduction and lower reverse recovery charge.
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