Single FETs, MOSFETs DMG7702SFG-7 product image

DMG7702SFG-7

$0.84
  • Description:MOSFET N-CH 30V 12A POWERDI3333
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:11247157f0a7 Category: Brand:

  
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DMG7702SFG-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 30V 12A POWERDI3333. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMG7702SFG-7

  • Description:MOSFET N-CH 30V 12A POWERDI3333
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:12A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:10mOhm @ 13.5A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:31.6 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:4310 pF @ 15 V
  • FET Feature:Schottky Diode (Body)
  • Power Dissipation (Max):890mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:POWERDI3333-8
  • Package / Case:8-PowerVDFN

Single FETs, MOSFETs datasheet and documents for DMG7702SFG-7

DMG7702SFG-7

Single FETs, MOSFETs Overview

The DMG7702SFG-7 is a single N-channel enhancement mode MOSFET with an integrated Schottky diode, housed in a PowerDI3333-8 package. It features a drain-source voltage of 30V and continuous drain currents of 12A at VGS=10V or 9.5A at VGS=4.5V. The device offers low on-resistance (RDS(on)) of 10mΩ at 10V gate drive and 15mΩ at 4.5V. Operating temperatures range from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

  • DIOFET technology monolithically integrates a MOSFET and Schottky diode to minimize conduction losses and switching losses.
  • Low reverse recovery charge (Qrr) reduces body diode switching losses.
  • Small form factor thermally efficient package enables higher density end products.
  • Qualified to AEC-Q101 standards for high reliability.

Single FETs, MOSFETs Applications

  • Backlighting
  • Power Management Functions
  • DC-DC Converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix (-7 or -13) to confirm tape and reel quantity requirements. Confirm that the component status is acceptable for your design lifecycle, as it is marked not recommended for new design. Ensure compliance with RoHS and halogen-free specifications if required by your manufacturing process.

Single FETs, MOSFETs Selection Notes

Select this component when a compact solution combining a power switch and freewheeling diode is needed. Consider the low RDS(on) for efficiency and the small PowerDI3333-8 footprint for space-constrained designs. Evaluate thermal performance based on the specified junction-to-ambient resistance values under your board layout conditions.

Single FETs, MOSFETs Part Context

This part belongs to Diodes Incorporated's DIOFET family, which combines MOSFET and Schottky technologies. It is designed for high-efficiency power management applications where minimizing board area and conduction losses are critical priorities.

Single FETs, MOSFETs Replacement Considerations

The datasheet explicitly states 'NO ALTERNATE PART'. No public substitute part numbers are confirmed for direct replacement.

Single FETs, MOSFETs FAQ

What is the maximum continuous drain current?

The maximum continuous drain current is 12A at VGS = 10V and 9.5A at VGS = 4.5V, measured at TA = +25°C.

Does this component include a body diode?

Yes, it integrates a Schottky diode to reduce losses due to body diode conduction and lower reverse recovery charge.

DMG7702SFG-7DMG7702SFG-7
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