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DMG8880LK3-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 30V 11A TO252. Review the specifications below when checking this part for your BOM.
The DMG8880LK3-13 is an N-channel enhancement mode MOSFET in a TO252-3L package. It features a drain-source voltage of 30V and continuous drain currents of 11A at 25°C and 16.5A on high-copper PCBs. The device exhibits low on-resistance, with maximum values of 7.5mΩ at VGS=10V and 12mΩ at VGS=4.5V. Total gate charge is 27.6nC at 10V. Operating temperature ranges from -55°C to +150°C.
Verify the specific ordering suffix '-13' corresponds to the tape and reel packaging configuration containing 2500 units per reel. Confirm that the component meets RoHS compliance requirements and utilizes lead-free design specifications as defined by the manufacturer's green policy documentation.
Select this component when a 30V N-channel MOSFET with low thermal resistance is required. Ensure the application supports the TO252-3L surface mount footprint. Verify that the drive voltage aligns with the specified RDS(on) thresholds for optimal efficiency.
This part belongs to Diodes Incorporated's N-channel enhancement mode MOSFET family. It is designed for high-reliability environments, specifically meeting AEC-Q101 qualification standards. The product line emphasizes low on-resistance and fast switching performance within compact surface-mount packages.
Consult official substitution lists for verified equivalents. Cross-reference pinouts and electrical parameters before implementation.
The maximum continuous drain current is 11A at 25°C ambient temperature and 16.5A when mounted on a high-copper PCB.
Yes, the DMG8880LK3 is qualified to AEC-Q101 standards for high reliability in automotive applications.
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