DMG9933USD-13

Overview

The DMG9933USD-13 is a dual P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a SO-8 surface-mount package and operates with a drain-source voltage of -20V and a gate-source voltage range of ±12V. At +25°C, the continuous drain current reaches -4.6A at VGS = -4.5V, with a maximum on-resistance of 75mΩ under the same condition. The device exhibits low input capacitance (608.4pF) and fast switching characteristics, including turn-on rise and fall times of 10.29ns and 22.19ns respectively. It supports an operating temperature range from -55°C to +150°C.

Feature Summary

• Dual P-channel configuration designed for high-efficiency power management applications
• Low on-state resistance combined with superior switching performance
• Totally lead-free and fully RoHS compliant construction
• Halogen and antimony free "Green" device

Applications

• Backlighting circuits
• Power-management functions
• DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel carrier format containing 2,500 units per reel. Confirm that the component originates from the Chengdu or Shanghai assembly sites as indicated by the marking codes. Ensure compliance with JEDEC standards for high reliability if required by the design specifications.

Selection Notes

Select this component when a dual P-channel topology is required within a compact SO-8 footprint. The device is suitable for applications demanding low static power consumption due to its low leakage currents. Evaluate the thermal resistance of 109 °C/W against the expected ambient conditions to ensure junction temperatures remain within the specified limits during operation.

Part Context

This part belongs to the DMG9933 series of dual P-channel MOSFETs produced by Diodes Incorporated. It utilizes silicon technology and is housed in a standard SOIC-8 package. The product is intended for general-purpose switching and amplification tasks where space constraints necessitate a dual-channel solution.

Replacement Considerations

For automotive applications requiring specific change control, refer to the related automotive grade parts with the Q-suffix. Verify pinout compatibility and electrical parameters before substituting with other dual P-channel MOSFETs in the SO-8 package.

FAQ

What is the maximum pulsed drain current for the DMG9933USD-13?

The maximum pulsed drain current (IDM) is rated at -20A.

Is the DMG9933USD-13 suitable for automotive applications?

This specific part is qualified to JEDEC standards for high reliability. For automotive applications requiring AEC-Q qualification and IATF 16949 manufacturing, please refer to the related automotive grade parts with the Q-suffix.

What is the typical gate threshold voltage?

The typical gate threshold voltage (VGS(th)) is -0.45V, with a maximum of -1.1V at ID = -250μA.