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Product Detailed Parameters
- Description：MOSFET 2N/2P-CH 60V 3.1A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N and 2 P-Channel (Full Bridge)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：3.1A, 2.4A
- Rds On (Max) @ Id, Vgs：100mOhm @ 1A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：11.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：731pF @ 20V, 618pF @ 20V
- Power - Max：1.6W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
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Overview
The DMHC6070LSD-13 is a complementary enhancement mode MOSFET H-Bridge from Diodes Incorporated, packaged in an SOIC-8 case. It integrates two N-channel and two P-channel devices. The N-channel features a drain-source breakdown voltage of 60V, with on-resistance values of 100mΩ at VGS=10V and 120mΩ at VGS=4.5V. Continuous drain current reaches 4.1A at 25°C for the N-channel and 3.1A for the P-channel. The P-channel exhibits on-resistances of 170mΩ at VGS=-10V and 250mΩ at VGS=-4.5V. Total power dissipation is rated at 1.6W, with an operating temperature range spanning -55°C to +150°C.
Feature Summary
- Integrates two N-channel and two P-channel transistors within a single SOIC package
- Provides low on-resistance suitable for low gate drive applications
- Designed for fast switching speed and low input capacitance
Applications
- DC Motor Control
- DC-AC Inverters
Procurement Notes
Verify the component against the official Diodes Incorporated datasheet DS38714 Rev. 1-2 to confirm electrical parameters and pinout compatibility. Ensure that the SO-8 packaging and tape & reel specifications align with automated assembly requirements. Cross-reference maximum ratings such as thermal resistance and avalanche energy to validate suitability for the target circuit environment.
Selection Notes
Select this device for designs requiring a compact complementary MOSFET solution. Evaluate the specific on-resistance requirements at the intended gate drive voltage, noting the difference between 10V and 4.5V operation. Consider the total power dissipation limits and thermal resistance characteristics when determining heat sinking needs for continuous duty cycles.
Part Context
This part belongs to the DMHC6070 series of complementary enhancement mode MOSFETs manufactured by Diodes Incorporated. It is designed specifically for H-Bridge configurations, combining both N-channel and P-channel technologies into one package to reduce board space and simplify driver design compared to discrete solutions.
Replacement Considerations
Consult the manufacturer's documentation for officially confirmed substitute part numbers. Verify that any alternative maintains identical pin configuration, voltage ratings, and thermal performance before implementation.
FAQ
What are the static drain-source on-resistance values for the N-channel?
The N-channel has a typical RDS(ON) of 60mΩ at VGS=10V and 70mΩ at VGS=4.5V, with maximum values of 100mΩ and 120mΩ respectively.
How does the P-channel on-resistance vary with gate voltage?
The P-channel RDS(ON) is typically 120mΩ at VGS=-10V and increases to 170mΩ at VGS=-4.5V.
What is the maximum continuous drain current rating?
The N-channel supports up to 4.1A at TA=+25°C, while the P-channel supports up to 3.1A under the same conditions.
