DMHT3006LFJ-13

Overview

The DMHT3006LFJ-13 is a 30V N-channel enhancement mode MOSFET H-bridge from Diodes Incorporated, packaged in a V-DFN5045-12 case. It features a maximum drain-source voltage (BVDSS) of 30V and a gate-source voltage (VGSS) of ±20V. The device provides a continuous drain current (ID) of 13A at TA = +25°C with a static drain-source on-resistance (RDS(ON)) of 10mΩ max at VGS = 10V, or 15mΩ max at VGS = 4.5V. Total gate charge (Qg) is 17nC at VGS = 10V. Thermal resistance junction-to-ambient (RθJA) is 95°C/W steady state. Operating temperature range spans -55°C to +150°C.

Feature Summary

• Designed for high-efficiency power management applications by minimizing on-state resistance while maintaining superior switching performance.
• Totally lead-free and fully RoHS compliant, featuring halogen and antimony-free green device construction.

Applications

• High-efficiency bridge rectifiers

Procurement Notes

Verify the component against the official Diodes Incorporated datasheet DS40627 Rev. 3-2 to confirm authenticity. Ensure the ordering suffix matches the required reel quantity of 3000 units per reel. Cross-reference the manufacturer marking code T306LJ and date code YYWW format during physical inspection to validate production origin and traceability.

Selection Notes

Select this component when a compact quad N-channel MOSFET solution is required for low-voltage power stages. Evaluate the thermal characteristics based on the specific PCB copper area, as RθJA varies significantly between minimum pad layouts and larger heat-sinking configurations. Confirm that the 30V breakdown voltage aligns with the system's peak operating conditions.

Part Context

This part belongs to the DMHT series of advanced information MOSFETs manufactured by Diodes Incorporated. It utilizes the PowerDI family of surface-mount packages, specifically the V-DFN5045-12 configuration, which integrates four independent N-channel enhancement mode transistors into a single compact footprint for space-constrained designs.

Replacement Considerations

DMHT6016LFJ-13

FAQ

What is the package type for the DMHT3006LFJ-13?

The component uses a V-DFN5045-12 (Type C) package.

What are the maximum ratings for pulsed drain current?

The maximum pulsed drain current (IDM) is 80A, defined by a 10μs pulse with a 1% duty cycle.

How many channels does this MOSFET contain?

It contains four independent N-channel enhancement mode MOSFETs configured as an H-bridge.