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Product Detailed Parameters
- Description：MOSFET 4N-CH 60V 14.8A 12VDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：4 N-Channel (Full Bridge)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：14.8A (Ta)
- Rds On (Max) @ Id, Vgs：22mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：8.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：864pF @ 30V
- Power - Max：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：12-VDFN Exposed Pad
- Supplier Device Package：V-DFN5045-12
- Grade：-
- Qualification：-
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Overview
The DMHT6016LFJ-13 is a 60V N-channel enhancement mode MOSFET H-Bridge manufactured by Diodes Incorporated. It integrates four N-channel transistors in a V-DFN5045-12 package. The device features a maximum drain-source voltage of 60V and a continuous drain current of 10.6A at +25°C. Static drain-source on-resistance is specified as 17mΩ (max 22mΩ) at VGS=10V, and 22.2mΩ (max 30mΩ) at VGS=4.5V. Gate-source voltage limits are ±20V. Total gate charge is 17nC at VGS=10V. Operating temperature range spans from -55°C to +150°C.
Feature Summary
- Complementary MOSFET H-Bridge configuration for efficient power switching
- Low on-resistance achievable with low gate drive requirements
- Thermally efficient package design for cooler running applications
- Totally lead-free and fully RoHS compliant
Applications
- Motor Control
- DC-DC Converters
- Power Management
Procurement Notes
Verify the component against the official Diodes Incorporated datasheet DS37895 Rev. 2-2. Confirm the part number suffix matches the specific tape and reel packaging quantity of 3,000 units. Ensure the manufacturer identification aligns with Diodes Incorporated to avoid counterfeit components.
Selection Notes
Select this component for applications requiring an integrated H-Bridge solution within a compact surface-mount footprint. Evaluate thermal performance based on the junction-to-ambient resistance values provided in the datasheet under specific board mounting conditions. Verify that the required gate drive voltage meets the threshold specifications for optimal on-resistance performance.
Part Context
This component belongs to the DMHT series of complementary MOSFET H-Bridges designed by Diodes Incorporated. It utilizes the V-DFN5045-12 case style, which provides a green molding compound and UL flammability classification rating of 94V-0. The internal schematic connects four N-channel transistors to facilitate bridge configurations.
Replacement Considerations
Consult the official datasheet for cross-reference information. No specific substitute part numbers are documented in the provided source material.
FAQ
What is the maximum continuous drain current at +25°C?
The maximum continuous drain current is 10.6A when the gate-source voltage is set to 10V.
Does the device support high-temperature operation?
Yes, the operating and storage temperature range extends up to +150°C.
What is the typical turn-on delay time?
The typical turn-on delay time is 3.4ns under standard test conditions.
