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DMJ2768-000 is listed in the RF Diode range at ChipApex. The manufacturer field lists Skyworks Solutions Inc.. Its product description is RF DIODE SCHOTTKY 75MW. Review the specifications below when checking this part for your BOM.
RF Diode specifications for DMJ2768-000
- Description：RF DIODE SCHOTTKY 75MW
- Series：DMJ
- Mfr：Skyworks Solutions Inc.
- Package：Tray
- Diode Type：Schottky - 1 Bridge
- Voltage - Peak Reverse (Max)：-
- Current - Max：100 mA
- Capacitance @ Vr, F：-
- Resistance @ If, F：-
- Power Dissipation (Max)：75 mW
- Operating Temperature：-65°C ~ 175°C (TA)
- Package / Case：4-SMD, Flat Leads
- Supplier Device Package：-
- Grade：-
- Qualification：-
RF Diode datasheet and documents for DMJ2768-000
RF Diode Overview
The DMJ2768-000 is a beam-lead silicon Schottky barrier mixer diode from the DMJ series, designed for Ku-band applications spanning 12.4 to 18.0 GHz. It features a bridge quad configuration with four junctions per package. Key electrical specifications include a maximum capacitance of 0.05 pF at 0 V and 1 MHz, a typical series resistance of 13 Ω at 5 mA, and a forward voltage range of 500 to 680 mV at 1 mA. The device operates within an ambient temperature range of -65°C to +175°C and supports a continuous wave power dissipation of 75 mW per junction.
RF Diode Feature Summary
- Beam-lead design reduces bonding challenges associated with low capacitance junctions
- Statistical process control wafer fabrication ensures uniformity and close impedance control
- Low parasitics and uniformity make it well-suited for balanced mixer circuits
RF Diode Applications
- Microwave Integrated Circuits (MICs)
- Ku-band mixers
- Detectors
- Modulators
- High-speed switches
RF Diode Procurement Notes
Verify component authenticity through authorized Skyworks distributors or direct manufacturer channels. Confirm datasheet revision status prior to integration. Ensure electrostatic discharge precautions are implemented during handling and assembly to prevent damage to the sensitive beam-lead structure.
RF Diode Selection Notes
Select this part for Ku-band designs requiring high drive levels and low distortion. Compare against single or pair configurations if fewer junctions suffice. Verify that the 13 Ω series resistance and 0.05 pF capacitance align with the specific local oscillator drive requirements of the target application.
RF Diode Part Context
This component belongs to the DME, DMF, and DMJ series of silicon beam-lead Schottky mixer diodes. The DMJ suffix indicates a high-drive level variant optimized for applications requiring higher forward voltages. The series covers frequency bands from S through Ka, providing standardized solutions for various microwave integrated circuit needs.
RF Diode Replacement Considerations
DMJ2824-000
RF Diode FAQ
What is the maximum operating temperature for the DMJ2768-000?
The absolute maximum operating temperature is +175°C.
How many junctions are contained in the DMJ2768-000 package?
The DMJ2768-000 is a bridge quad configuration containing four junctions.
What is the specified capacitance range for this device?
The maximum capacitance is 0.05 pF measured at 0 V and 1 MHz.
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