DMJ65H430SCTI

Single FETs, MOSFETs Overview

The DMJ65H430SCTI is an N-Channel Enhancement Mode MOSFET manufactured by Diodes Incorporated. It utilizes a Through Hole ITO220AB-N (Type HE) package. The device features a Drain-to-Source Voltage (Vdss) of 650 V and a continuous Drain Current (Id) of 14 A at case temperature. Key electrical characteristics include a low on-resistance of 430 mOhm @ 5A, 10V, a gate threshold voltage of 5V @ 250µA, a total gate charge of 24.5 nC @ 10 V, and a maximum gate-source voltage of ±30V.

Single FETs, MOSFETs Feature Summary

• High breakdown voltage rating suitable for power applications
• Low input capacitance for efficient switching
• Low input and output leakage currents
• Lead-free finish compliant with RoHS standards

Single FETs, MOSFETs Applications

• Power supply circuits requiring high voltage isolation
• Switching applications utilizing through-hole mounting
• Industrial power management systems

Single FETs, MOSFETs Procurement Notes

Verify the component status as scheduled for obsolescence before finalizing procurement plans. Confirm that the ITO220AB-N package dimensions match the target design constraints. Ensure compatibility with existing thermal management solutions given the specific current ratings. Review the official datasheet for any updates regarding end-of-life timelines or recommended replacement alternatives from the manufacturer.

Single FETs, MOSFETs Selection Notes

Select this component when a high-voltage N-Channel MOSFET in a through-hole package is required. The 650 V rating supports demanding power environments. Consider the 14 A current capacity and 430 mOhm on-resistance for efficiency calculations. Verify that the ±30V gate-source voltage limit aligns with the driving circuit specifications to prevent damage.

Single FETs, MOSFETs Part Context

This part belongs to the DMJ65 series of N-Channel MOSFETs from Diodes Incorporated. It shares the same package type and general technology as variants like the DMJ65H650SCTI and DMJ65H190SCTI. These components are designed for robust power switching applications where through-hole reliability and high voltage tolerance are critical design parameters.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Users should consult the manufacturer directly for approved replacements due to the scheduled obsolescence status.