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DMJ70H1D4SV3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CHANNEL 700V 5A TO251. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMJ70H1D4SV3
- Description：MOSFET N-CHANNEL 700V 5A TO251
- Series：-
- Mfr：Diodes Incorporated
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：700 V
- Current - Continuous Drain (Id) @ 25°C：5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：1.5Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：7.5 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：342 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：78W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-251 (Type TH3)
- Package / Case：TO-251-3 Stub Leads, IPAK
Single FETs, MOSFETs datasheet and documents for DMJ70H1D4SV3
Single FETs, MOSFETs Overview
The DMJ70H1D4SV3 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (BVDSS) of 700V and a maximum on-resistance (RDS(ON)) of 1.5Ω at VGS = 10V. The device supports a continuous drain current of 5.0A at TC = +25°C and 3.2A at TC = +100°C. It utilizes a TO251 (Type HE1) surface-mount package with matte tin annealed terminals over a copper leadframe.
Single FETs, MOSFETs Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management applications.
- Features low input capacitance and a high BVDSS rating suitable for demanding power applications.
- Constructed with a molded plastic case using green molding compound, ensuring compliance with RoHS directives and free from halogen and antimony.
Single FETs, MOSFETs Applications
- Adaptor
- LCD & PDP TV
- Lighting
Single FETs, MOSFETs Procurement Notes
Verify the document revision status before implementation, as the datasheet explicitly states this component is not recommended for new design and has no alternate part. Confirm that the specific ordering suffix matches the required packaging quantity of 75 pieces per tube. Ensure all electrical parameters align with the target application requirements prior to procurement.
Single FETs, MOSFETs Selection Notes
Select this component for existing designs requiring a 700V N-channel MOSFET in a TO251 package. Evaluate thermal constraints carefully, as the continuous drain current drops significantly at elevated case temperatures. Consider the explicit manufacturer warning regarding its status when planning long-term production cycles or future product iterations.
Single FETs, MOSFETs Part Context
This component belongs to the DMJ series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. It is housed in a TO251 (Type HE1) surface-mount package designed for efficient heat dissipation. The device is intended for use in general-purpose power switching applications where high voltage blocking capability is required.
Single FETs, MOSFETs Replacement Considerations
The datasheet explicitly states there is no alternate part available for this component. Designers should verify if any legacy inventory remains sufficient for their needs, as no direct replacement is officially supported by the manufacturer.
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