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DMJ70H600HK3-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET BVDSS: 651V~800V TO252 T&. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMJ70H600HK3-13
- Description：MOSFET BVDSS: 651V~800V TO252 T&
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：700 V
- Current - Continuous Drain (Id) @ 25°C：7.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：600mOhm @ 2.4A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：17.4 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：570 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：90W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252 (DPAK)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Single FETs, MOSFETs datasheet and documents for DMJ70H600HK3-13
Single FETs, MOSFETs Overview
The DMJ70H600HK3-13 is a 700V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 700V and a static drain-source on-resistance (RDS(ON)) of 0.6Ω at VGS = 10V. The device supports a continuous drain current (ID) of 7.6A at TC = +25°C and a pulsed drain current (IDM) of 30A. Total power dissipation reaches 90W at TC = +25°C, with a thermal resistance from junction to case (RθJC) of 1.4°C/W. Operating temperature ranges from -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- Designed for high-efficiency power management applications
- Optimized for low on-state resistance while maintaining superior switching performance
- RoHS compliant and halogen/antimony free green device
Single FETs, MOSFETs Applications
- Motor controls
- Backlighting
- AC-DC converters
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the tape and reel packaging quantity of 2,500 units as documented in the official datasheet. Confirm that the component meets RoHS directives and environmental requirements before finalizing procurement specifications.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring high-voltage handling up to 700V with moderate current capabilities. Evaluate the thermal resistance and power dissipation limits against the expected operating conditions to ensure reliable performance within the specified temperature range.
Single FETs, MOSFETs Part Context
This part belongs to the DMJ series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes a TO252 (DPAK) package designed for surface mount applications. The product is marked as not recommended for new design; consult the manufacturer for updated alternatives.
Single FETs, MOSFETs Replacement Considerations
The datasheet explicitly states this part is not recommended for new design. Contact Diodes Incorporated or local representatives directly for qualified replacement options or updated product recommendations.
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