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DMJ70H600SH3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 700V 11A TO251. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMJ70H600SH3
- Description：MOSFET N-CH 700V 11A TO251
- Series：-
- Mfr：Diodes Incorporated
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：700 V
- Current - Continuous Drain (Id) @ 25°C：11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：600mOhm @ 2.4A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：18.2 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：643 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：113W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-251
- Package / Case：TO-251-3 Short Leads, IPAK, TO-251AA
Single FETs, MOSFETs datasheet and documents for DMJ70H600SH3
Single FETs, MOSFETs Overview
The DMJ70H600SH3 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source breakdown voltage of 700V and a continuous drain current of 11A at case temperature. The device exhibits a maximum on-resistance of 0.6 ohms at a gate-source voltage of 10V. It operates within a junction temperature range of -55°C to +150°C and dissipates up to 113W under thermal case conditions.
Single FETs, MOSFETs Feature Summary
- High breakdown voltage rating suitable for power applications
- Low on-resistance for improved efficiency
- Low input capacitance for switching performance
Single FETs, MOSFETs Applications
- Power supply circuits requiring high voltage isolation
- Industrial motor control systems
- General purpose power switching applications
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix SH3 against official Diodes Incorporated documentation to confirm lead-free finish and RoHS compliance status. Ensure the TO-251 package variant matches the required PCB footprint. Cross-reference the datasheet revision date to validate electrical parameters such as Rds(on) and BVdss before finalizing procurement specifications.
Single FETs, MOSFETs Selection Notes
Select this component when a 700V N-channel MOSFET with moderate current handling is required in a surface-mount TO-251 package. Consider the 0.6-ohm on-resistance limit for thermal management calculations. Verify that the 11A continuous current rating aligns with the application's peak load requirements under specified case temperatures.
Single FETs, MOSFETs Part Context
This part belongs to the DMJ series of N-channel enhancement mode MOSFETs from Diodes Incorporated. These devices are designed for general-purpose power switching applications where high voltage blocking capability is essential. The TO-251 (IPak) package provides a compact solution for board-level integration while maintaining adequate thermal dissipation characteristics for medium-power designs.
Single FETs, MOSFETs Replacement Considerations
Consult official manufacturer substitution guides for verified equivalents. No public substitute part numbers are confirmed in available documentation.
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