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Product Detailed Parameters
- Description：MOSFET 2N-CH 12V 20A X2-TSN1820
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Common Drain
- FET Feature：-
- Drain to Source Voltage (Vdss)：12V
- Current - Continuous Drain (Id) @ 25°C：20A (Ta)
- Rds On (Max) @ Id, Vgs：3.55mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id：1.4V @ 870µA
- Gate Charge (Qg) (Max) @ Vgs：29nC @ 4V
- Input Capacitance (Ciss) (Max) @ Vds：2865pF @ 6V
- Power - Max：1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：10-SMD, No Lead
- Supplier Device Package：X2-TSN1820-10
- Grade：-
- Qualification：-
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Overview
The DMN1001UCA10 is an N-channel enhancement mode MOSFET designed for high-efficiency power management. It features a source-source configuration with a breakdown voltage of 12V and a maximum continuous source current of 20A at +25°C. The device achieves a typical on-resistance of 3.36mΩ at VGS=3.8V and 1.9mΩ at VGS=4.5V, both measured at IS=5A. Packaged in the X2-TSN1820-10 footprint measuring 1.84mm x 1.96mm with a height of 0.30mm, it supports operating temperatures from -55°C to +150°C.
Feature Summary
- Ultra-low profile CSP package with dimensions of 1.84mm x 1.96mm and a height of 0.30mm
- Integrated ESD protection diodes on Gate 1 and Gate 2 terminals
- Totally lead-free and fully RoHS compliant construction
- Halogen and antimony free green device classification
Applications
- Battery Management Systems
- Load Switching Circuits
- Battery Protection Modules
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the 3000-unit tape and reel packaging format. Confirm that the component meets AEC-Q100/101/200 standards if automotive qualification is required, as standard production may not include these certifications without explicit request. Ensure compatibility with NiAu terminal finishes for solderability requirements.
Selection Notes
Select this component for applications requiring minimal board space due to its compact X2-TSN1820-10 footprint. Evaluate thermal performance based on the 125°C/W junction-to-ambient resistance for minimum pad layouts or 52°C/W for optimized copper areas. Verify gate drive voltages align with the specified thresholds for optimal on-resistance performance.
Part Context
This part belongs to the DMN10 series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It utilizes the X2-TSN1820-10 case style, which provides a small surface-mount solution. The device is distinct from higher voltage variants within the same family by its 12V source-source breakdown rating.
Replacement Considerations
Check datasheets for other DMN10 series parts with compatible 12V ratings and similar footprint constraints. Verify pinout compatibility for the dual-gate source-source configuration before substituting.
