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Product Detailed Parameters
- Description：MOSFET 2N-CH X4-DSN3118-6
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Common Drain
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：68.6nC @ 4V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-SMD, No Lead
- Supplier Device Package：X4-DSN3118-6
- Grade：-
- Qualification：-
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Overview
The DMN1002UCA6-7 is an N-channel enhancement mode MOSFET from Diodes Incorporated, packaged in the X4-DSN3118-6 (CSP) form factor with dimensions of 3.05mm x 1.77mm and a height of 0.11mm. It features a source-source breakdown voltage (BVSSS) of 12V and a typical static on-resistance (RSS(ON)) of 2.36mΩ at VGS = 3.8V. The device supports a continuous source current of 24.4A at TA = +25°C and operates within a junction temperature range of -55°C to +150°C. Electrical characteristics include a gate threshold voltage of 0.35V to 1.4V and a total gate charge of 45.7nC typ. It is supplied in tape and reel packaging.
Feature Summary
- Ultra-low profile CSP package designed for space-constrained applications
- Integrated ESD protection for the gate terminal
- Optimized for high efficiency power management through minimized on-state resistance
- Totally lead-free and fully RoHS compliant construction
Applications
- Battery Management Systems
- Load Switching circuits
- Battery Protection modules
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the 3000-unit tape and reel packaging configuration as documented in the official datasheet. Confirm that the component meets the required environmental standards, specifically the halogen-free and antimony-free 'Green' device definitions provided by the manufacturer. Ensure compatibility with the specified moisture sensitivity level and soldering finish requirements during assembly planning.
Selection Notes
Select this component when a low-profile surface mount solution is required for 12V DC load switching or battery protection tasks. The extremely low on-resistance makes it suitable for high-current applications where minimizing conduction losses is critical. Evaluate the thermal performance against the specified junction-to-ambient resistance values based on the intended PCB copper area and mounting conditions to ensure reliable operation under maximum load.
Part Context
This part belongs to Diodes Incorporated's DMN series of N-channel enhancement mode MOSFETs. It utilizes the X4-DSN3118-6 case style, which is a compact chip-scale package designed to replace larger traditional packages while maintaining robust electrical performance. The series focuses on providing high current density in minimal footprint areas for portable and automotive electronics.
Replacement Considerations
Consult the manufacturer's documentation for direct pin-compatible alternatives within the same series. Verify that any substitute maintains the 12V breakdown voltage and comparable on-resistance specifications to ensure circuit functionality is preserved without redesign.
