DMN1004UFV-13

$0.72

Description：MOSFET N-CH 12V 70A POWERDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:9dc27ac07b3c Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN1004UFV-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 12V 70A POWERDI3333. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN1004UFV-13

Description：MOSFET N-CH 12V 70A POWERDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：12 V
Current - Continuous Drain (Id) @ 25°C：70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：3.8mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：47 nC @ 8 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：2385 pF @ 6 V
FET Feature：-
Power Dissipation (Max)：1.9W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerDI3333-8 (Type UX)
Package / Case：8-PowerVDFN

Single FETs, MOSFETs datasheet and documents for DMN1004UFV-13

DMN1004UFV-13

Single FETs, MOSFETs Overview

The DMN1004UFV-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a Drain-Source Voltage (BVDSS) of 12 V and a maximum continuous drain current (ID) of 70 A at TC = +25°C. The device exhibits a static Drain-Source On-Resistance (RDS(ON)) of 3.8 mΩ max at VGS = 4.5V and 5.1 mΩ max at VGS = 2.5V. Total gate charge (QG) is 47 nC at VGS = 8V. Operating temperature range spans from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Low RDS(ON) minimizes on-state losses for high efficiency power management.
PowerDI3333-8 package occupies 33% board area compared to SO-8, enabling higher density designs.
Gate includes ESD protection circuitry.

Single FETs, MOSFETs Applications

Power Management Functions
DC-DC Converters
Battery Applications

Single FETs, MOSFETs Procurement Notes

Verify the ordering suffix '-13' corresponds to the Tape & Reel packaging configuration containing 3,000 units per reel. Confirm compliance with RoHS directives and Halogen/Antimony-free requirements as specified in the manufacturer's documentation. Ensure the PowerDI3333-8 footprint matches the suggested pad layout provided in the datasheet.

Single FETs, MOSFETs Selection Notes

Select this component when a 12V rating and low on-resistance are required for compact power stages. The small form factor supports space-constrained layouts. Verify that the thermal resistance characteristics align with the specific PCB copper area and ambient conditions of the target design.

Single FETs, MOSFETs Part Context

This part belongs to the DMN1004 series of N-channel MOSFETs. It utilizes the PowerDI3333-8 (Type UX) case style, which is a molded plastic package designed for surface mount technology. The product line focuses on minimizing physical size while maintaining electrical performance for portable and dense electronic systems.

Single FETs, MOSFETs Replacement Considerations

DMN1004UFV-7 is an equivalent part number within the same family, differing only in the tape and reel quantity (2,000 units). Both share identical electrical specifications and mechanical dimensions.