DMN1005UFDF-13

Single FETs, MOSFETs Overview

The DMN1005UFDF-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in a PowerDI3333-8 surface-mount package, specifically identified as U-DFN2020-6(F) class in documentation. The device features a drain-source breakdown voltage (Vds) of 12 V and supports a continuous drain current (Id) of up to 70 A at case temperature. Key electrical parameters include a maximum on-resistance (Rds On) of 2.8 mOhms, a gate charge (Qg) of 47 nC, and a threshold voltage (Vgs th) of 300 mV. It operates within a junction temperature range of -55°C to +150°C with a power dissipation rating of 900 mW.

Single FETs, MOSFETs Feature Summary

• Single N-channel enhancement mode configuration for efficient switching control
• Ultra-low on-resistance design to minimize conduction losses
• Compact PowerDI3333-8 surface-mount footprint for space-constrained layouts

Single FETs, MOSFETs Applications

• Embedded systems requiring compact power switching solutions
• Industrial automation control circuits
• Power management modules in consumer electronics

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix and packaging variant against the official Diodes Incorporated datasheet before ordering. Confirm that the U-DFN2020-6 package dimensions match your PCB footprint requirements. Ensure thermal management strategies align with the 900 mW power dissipation limit under your specific operating conditions. Cross-reference the manufacturer part number to avoid confusion with similar series components.

Single FETs, MOSFETs Selection Notes

Select this component when a low-profile N-channel MOSFET with high current capability is required for dense circuit boards. The 12 V rating suits low-voltage logic interfaces. Consider the 2.8 mOhm Rds On for efficiency-critical paths. Verify that the 47 nC gate charge meets the driving capabilities of your controller. Ensure the operating temperature range covers your environmental extremes.

Single FETs, MOSFETs Part Context

This component belongs to the DMN series of single N-channel MOSFETs from Diodes Incorporated. It is designed for general-purpose switching applications where size and efficiency are priorities. The PowerDI package family offers improved thermal performance compared to traditional SOT packages while maintaining a small outline.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers for DMN1005UFDF-13 were not found in the provided source material. Consult the manufacturer's official substitution guide or equivalent parameter matching tools for verified alternatives.