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DMN1019UVT-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 12V 10.7A TSOT26. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMN1019UVT-13
- Description：MOSFET N-CH 12V 10.7A TSOT26
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：12 V
- Current - Continuous Drain (Id) @ 25°C：10.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.2V, 4.5V
- Rds On (Max) @ Id, Vgs：10mOhm @ 9.7A, 4.5V
- Vgs(th) (Max) @ Id：800mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：50.4 nC @ 8 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：2588 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1.73W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TSOT-26
- Package / Case：SOT-23-6 Thin, TSOT-23-6
Single FETs, MOSFETs datasheet and documents for DMN1019UVT-13
Single FETs, MOSFETs Overview
The DMN1019UVT-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a TSOT26 surface-mount package and operates with a drain-source voltage of 12V. The device provides a maximum on-resistance of 10mΩ at VGS=4.5V, supporting continuous drain currents up to 10.7A at +25°C. Key electrical parameters include a gate threshold voltage ranging from 0.35V to 0.8V, total gate charge of 50.4nC at VGS=8V, and input capacitance of 2588pF. It functions within a temperature range of -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- Low on-state resistance optimized for high efficiency power management applications
- Integrated ESD protection diode on the gate terminal
- Totally lead-free and fully RoHS compliant construction
Single FETs, MOSFETs Applications
- Load switching circuits
- DC-DC converters
- Power management functions
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix matches the required tape and reel quantity. Confirm that the component meets all applicable environmental directives and flammability ratings before integration into final assemblies. Ensure proper handling procedures are followed during assembly.
Single FETs, MOSFETs Selection Notes
Select this component when low on-resistance is critical for minimizing conduction losses in 12V systems. Evaluate thermal performance against the specified junction-to-ambient resistance values. Consider the gate charge requirements relative to the driving circuit capabilities.
Single FETs, MOSFETs Part Context
This part belongs to the DMN series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. The series focuses on providing superior switching performance combined with minimized on-state resistance for modern power management designs.
Single FETs, MOSFETs Replacement Considerations
Consult official manufacturer documentation for verified substitute part numbers. Do not assume functional equivalence based solely on similar pin configurations or voltage ratings without cross-referencing datasheet specifications.
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