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Product Detailed Parameters
- Description：MOSFET 2N-CH 12V 5.6A 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：12V
- Current - Continuous Drain (Id) @ 25°C：5.6A
- Rds On (Max) @ Id, Vgs：29mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：19.6nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds：914pF @ 6V
- Power - Max：1.4W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-UDFN Exposed Pad
- Supplier Device Package：U-DFN2020-6 (Type B)
- Grade：-
- Qualification：-
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Overview
The DMN1029UFDB-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a U-DFN2020-6 (Type B) package with a maximum height of 0.6mm. The device provides a drain-source voltage (BVDSS) of 12V and a continuous drain current (ID) of 5.6A at +25°C. Maximum on-resistance (RDS(ON)) values are 29mΩ at VGS=4.5V, 34mΩ at VGS=2.5V, 44mΩ at VGS=1.8V, and 65mΩ at VGS=1.5V. Total gate charge (Qg) is 10.5nC at VGS=4.5V and 19.6nC at VGS=8V. Input capacitance (Ciss) is 914pF. Operating temperature range spans from -55°C to +150°C.
Feature Summary
- Dual N-channel configuration in a low-profile U-DFN2020-6 package
- Optimized for high-efficiency power management applications
- Minimizes on-state resistance while maintaining superior switching performance
Applications
- Load switches
- Power-management functions
- Portable power adaptors
Procurement Notes
Verify the component against the official Diodes Incorporated datasheet DS37711 Rev. 4-2. Confirm that the marking code D5 matches the product type and check the date code YWX for manufacturing details. Ensure the package is U-DFN2020-6 Type B and verify RoHS compliance status through the manufacturer's quality definitions before finalizing procurement.
Selection Notes
Select this component when a 12V dual N-channel MOSFET is required for portable or space-constrained designs. The U-DFN2020-6 package supports surface mount assembly. Evaluate RDS(ON) requirements against specific gate drive voltages, as resistance varies significantly between 1.5V and 4.5V logic levels. Ensure thermal dissipation capabilities align with the steady-state power rating of 1.4W.
Part Context
This part belongs to the DMN1029 series of N-channel enhancement mode MOSFETs. It is designed specifically to minimize on-state resistance and conduction loss while maintaining switching performance. The device utilizes silicon technology and is housed in a molded plastic U-DFN2020-6 package with NiPdAu terminal finish over a copper leadframe.
Replacement Considerations
Consult the Diodes Incorporated website or contact local representatives for automotive-specific variants qualified to AEC-Q100/101/104/200 standards. Verify pinout compatibility and electrical parameters if substituting with other dual N-channel MOSFETs in the U-DFN2020-6 package.
