DMN1045UFR4-7

$0.40

Description：MOSFET N-CH 12V 3.2A 3DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:f46a131fbb41 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN1045UFR4-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 12V 3.2A 3DFN. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN1045UFR4-7

Description：MOSFET N-CH 12V 3.2A 3DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：12 V
Current - Continuous Drain (Id) @ 25°C：3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
Rds On (Max) @ Id, Vgs：45mOhm @ 3.2A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：4.8 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：375 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：500mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：X2-DFN1010-3
Package / Case：3-XFDFN

Single FETs, MOSFETs datasheet and documents for DMN1045UFR4-7

DMN1045UFR4-7

Single FETs, MOSFETs Overview

The DMN1045UFR4-7 is an N-channel enhancement mode MOSFET from Diodes Incorporated, housed in an X2-DFN1010-3 surface-mount package. It features a drain-source voltage (VDS) of 12 V and a continuous drain current (ID) of 3.2 A at +25°C. The device offers low on-state resistance (RDS(ON)), specified at 45 mΩ at VGS = 4.5V and 64 mΩ at VGS = 2.5V. Key electrical parameters include a gate threshold voltage (VGS(th)) ranging from 0.4 V to 1.0 V, total gate charge (Qg) of 4.8 nC, and input capacitance (Ciss) of 375 pF. Operating temperature ranges from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Designed for high efficiency power management applications by minimizing on-state resistance while maintaining superior switching performance.
Features an ESD protected gate structure to enhance reliability during handling and operation.
Compliant with RoHS directives and manufactured as a halogen-free and antimony-free "Green" device.

Single FETs, MOSFETs Applications

Power Management Functions
Backlighting circuits
Load Switch applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3000-unit tape and reel packaging configuration. Confirm that the component meets the required UL flammability classification rating of 94V-0 and moisture sensitivity level 1 per J-STD-020 standards for your assembly process.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a 12 V rated N-channel MOSFET with a maximum continuous current of 3.2 A. Ensure the gate drive voltage aligns with the RDS(ON) specifications, particularly if operating below the standard 4.5 V test condition. Verify thermal constraints against the junction-to-ambient resistance values provided for different PCB copper coverage scenarios.

Single FETs, MOSFETs Part Context

This part belongs to the DMN1045 series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. It utilizes the X2-DFN1010-3 case style, which provides a compact footprint suitable for space-constrained surface mount applications. The series is engineered to balance low conduction losses with fast switching characteristics.

Single FETs, MOSFETs Replacement Considerations

Consult official manufacturer documentation for verified substitute part numbers. Do not assume cross-compatibility based solely on similar voltage or current ratings without verifying pinout, package dimensions, and electrical parameter tolerances.