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DMN10H099SK3-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 100V 17A TO252. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMN10H099SK3-13
- Description：MOSFET N-CH 100V 17A TO252
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：80mOhm @ 3.3A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：25.2 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1172 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：34W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252-3
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Single FETs, MOSFETs datasheet and documents for DMN10H099SK3-13
Single FETs, MOSFETs Overview
The DMN10H099SK3-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 100V and a continuous drain current rating of 17A at +25°C case temperature. The device offers a maximum static drain-source on-resistance of 80mΩ at VGS = 10V and 99mΩ at VGS = 6V. Total gate charge is specified at 25.2nC at VGS = 10V. The component operates within a junction temperature range of -55°C to +150°C and utilizes a TO252 (DPAK) surface-mount package.
Single FETs, MOSFETs Feature Summary
- Low on-resistance minimizes conduction losses during operation
- Small form factor thermally efficient package enables higher density end products
- Lead-free finish with RoHS compliance
- Halogen and antimony free "Green" device construction
Single FETs, MOSFETs Applications
- Power management functions
- DC-DC converters
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix matches the required packaging configuration, as the standard designation indicates tape and reel quantities. Confirm that the component meets all applicable environmental directives for your region. Ensure the procurement channel is authorized to maintain product integrity and traceability standards defined by the manufacturer.
Single FETs, MOSFETs Selection Notes
Select this component when designing circuits requiring high efficiency in power management applications. The low on-resistance characteristics support reduced thermal generation in compact designs. Evaluate the thermal resistance parameters against your system's heat dissipation capabilities to ensure reliable operation across the specified temperature range.
Single FETs, MOSFETs Part Context
This part belongs to the DMN10 series of complementary MOSFETs from Diodes Incorporated. The series is engineered for high-efficiency power management solutions. The DMN10H099SK3 variant specifically targets applications demanding robust switching performance and low conduction losses within a standard DPAK footprint.
Single FETs, MOSFETs Replacement Considerations
Consult official datasheets for cross-reference compatibility. Verify pinout alignment, voltage ratings, and thermal characteristics before substituting.
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