DMN10H170SFG-13

Single FETs, MOSFETs Overview

The DMN10H170SFG-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (VDS) of 100 V and a gate-source voltage (VGS) rating of ±20 V. The device provides a continuous drain current (ID) of 2.9 A at +25°C ambient temperature, increasing to 8.5 A when mounted on a thermal pad. Maximum static drain-source on-resistance (RDS(on)) is specified as 122 mΩ at VGS = 10 V and 133 mΩ at VGS = 4.5 V. Total gate charge (Qg) is 14.9 nC at VGS = 10 V. Operating junction temperature range spans from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
• Occupies only 33% of the board area compared to SO-8 packages, enabling smaller end products with higher density.
• Qualified to AEC-Q101 standards for high reliability and tested 100% for unclamped inductive switching (UIS).
• Totally lead-free, fully RoHS compliant, and halogen and antimony free.

Single FETs, MOSFETs Applications

• Backlighting
• Power Management Functions
• DC-DC Converters

Single FETs, MOSFETs Procurement Notes

Verify that the specific ordering suffix '-13' corresponds to the standard compliance level and tape-and-reel packaging quantity of 3000 units per reel. Confirm that the component meets the required AEC-Q101 qualification standards if automotive or high-reliability application criteria are mandated. Ensure procurement channels provide original manufacturer documentation to validate the product marking code and date codes against the official datasheet specifications.

Single FETs, MOSFETs Selection Notes

Select this component when a compact surface-mount solution is required for 100 V N-channel switching applications. The POWERDI3333-8 package offers significant board space savings compared to traditional SO-8 footprints. Consider the thermal characteristics and RDS(on) values at specific gate drive voltages (4.5 V vs. 10 V) to ensure optimal conduction losses and switching speeds for the target DC-DC converter or power management circuit design.

Single FETs, MOSFETs Part Context

This part belongs to the DMN10 series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. It utilizes the proprietary POWERDI3333-8 surface-mount package, which integrates a large exposed copper pad for efficient heat dissipation. The series is engineered to balance low on-resistance with fast switching capabilities, targeting modern electronics where spatial constraints and thermal efficiency are critical design parameters.

Single FETs, MOSFETs Replacement Considerations

The datasheet lists DMN10H170SFG-7 as an equivalent part number within the same family, differing primarily in the reel packaging quantity (2000 units versus 3000 units). Both variants share identical electrical characteristics, package dimensions, and compliance levels. Verify that any alternative replacement maintains the same 100 V rating, PowerDI3333 footprint, and AEC-Q101 qualification status.

Single FETs, MOSFETs FAQ

What is the maximum continuous drain current for the DMN10H170SFG-13?

The maximum continuous drain current is 2.9 A at an ambient temperature of +25°C. When mounted on a thermal pad, this rating increases to 8.5 A at +25°C case temperature.

Is the DMN10H170SFG-13 qualified for automotive applications?

Yes, the device is qualified to AEC-Q101 standards for high reliability, making it suitable for demanding automotive and industrial environments.

How does the board area of the POWERDI3333 package compare to SO-8?

The POWERDI3333 package occupies just 33% of the board area typically occupied by an SO-8 package, allowing for more compact circuit board designs.