DMN10H170SK3-13

$0.65

Description：MOSFET N-CH 100V 12A TO252-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:ac9fe5715c47 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN10H170SK3-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 100V 12A TO252-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN10H170SK3-13

Description：MOSFET N-CH 100V 12A TO252-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：140mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：9.7 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1167 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：42W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252-3
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for DMN10H170SK3-13

DMN10H170SK3-13

Single FETs, MOSFETs Overview

The DMN10H170SK3-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a TO252 (DPAK) case with a drain-source voltage rating of 100V and a continuous drain current of 12A at TC = +25°C. The maximum on-resistance is 140mΩ at VGS = 10V and 160mΩ at VGS = 4.5V. Total gate charge is 9.7nC at VGS = 10V. Thermal resistance from junction to case is 3°C/W, with total power dissipation rated at 42W at TC = +25°C.

Single FETs, MOSFETs Feature Summary

Low on-resistance for minimized conduction losses
Superior switching performance suitable for high-efficiency applications
Qualified to AEC-Q101 standards for automotive reliability
Totally lead-free and fully RoHS compliant

Single FETs, MOSFETs Applications

DC-DC Converters
Power Management Functions
Analog Switch

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2,500 units per tape and reel packaging configuration. Confirm that the component meets the required AEC-Q101 qualification standards if intended for automotive environments. Ensure the TO252 (DPAK) package dimensions align with the target PCB footprint layout.

Single FETs, MOSFETs Selection Notes

Select this component when a 100V N-channel MOSFET with low RDS(ON) is required in a DPAK package. Consider the thermal resistance and power dissipation limits relative to the expected operating temperature. Evaluate the gate charge requirements against the driving circuit capabilities to ensure adequate switching speeds.

Single FETs, MOSFETs Part Context

This device belongs to the DMN10 series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. The series focuses on minimizing on-state resistance while maintaining fast switching characteristics. The DMN10H170SK3 variant specifically utilizes the TO252 (DPAK) mechanical case for surface mount assembly.

Single FETs, MOSFETs Replacement Considerations

Cross-reference other DMN10 series parts or equivalent 100V N-channel MOSFETs in the TO252 package. Verify matching electrical parameters such as V(BR)DSS, RDS(ON), and Qg before substitution.