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DMN10H170SVT-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 100V 2.6A TSOT26. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMN10H170SVT-7
- Description：MOSFET N-CH 100V 2.6A TSOT26
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：2.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：160mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：9.7 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1167 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TSOT-26
- Package / Case：SOT-23-6 Thin, TSOT-23-6
Single FETs, MOSFETs datasheet and documents for DMN10H170SVT-7
Single FETs, MOSFETs Overview
The DMN10H170SVT is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 100V and a continuous drain current of 2.6A at +25°C. The device offers a maximum on-resistance of 160mΩ at VGS=10V and 200mΩ at VGS=4.5V. Packaged in a TSOT26 surface-mount case, it operates within a temperature range of -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- Designed for high-efficiency power management applications with minimized on-state resistance.
- Maintains superior switching performance alongside low input capacitance.
- Features a low gate threshold voltage suitable for various drive conditions.
Single FETs, MOSFETs Applications
- Power Management Functions
- Battery Operated Systems
- Solid-State Relays
- Drivers for Relays, Solenoids, Lamps, Hammers, Displays, Memories
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging quantity and reel specifications. Confirm RoHS compliance status and lead-free terminal finish requirements prior to procurement. Ensure the selected variant matches the required tape and reel dimensions for automated assembly processes.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring a compact TSOT26 footprint with 100V blocking capability. Evaluate thermal resistance values relative to the intended PCB copper area and ambient operating conditions. Consider the gate charge characteristics when designing driver circuits for optimal switching speed and efficiency.
Single FETs, MOSFETs Part Context
This part belongs to the DMN10 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in a TSOT26 package. The series is engineered to balance low on-resistance with fast switching speeds for efficient power control.
Single FETs, MOSFETs Replacement Considerations
Consult official manufacturer substitution guides for verified alternatives. Cross-reference pinouts, electrical ratings, and package dimensions before implementing any substitute components.
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