DMN10H170SVTQ-7

$0.65

Description：MOSFET N-CH 100V 2.6A TSOT26
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:23a501080a14 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN10H170SVTQ-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 100V 2.6A TSOT26. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN10H170SVTQ-7

Description：MOSFET N-CH 100V 2.6A TSOT26
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：160mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：9.7 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1167 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1.2W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TSOT-26
Package / Case：SOT-23-6 Thin, TSOT-23-6

Single FETs, MOSFETs datasheet and documents for DMN10H170SVTQ-7

DMN10H170SVTQ-7

Single FETs, MOSFETs Overview

The DMN10H170SVTQ is a 100V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source on-resistance of 160mΩ at VGS=10V and 200mΩ at VGS=4.5V, with continuous drain currents of 2.6A at 25°C and 2.1A at 70°C. The device utilizes a TSOT26 surface-mount package and operates within a junction temperature range of -55°C to +150°C. Key electrical parameters include a gate threshold voltage of 1.0V to 3.0V, total gate charge of 9.7nC at VGS=10V, and input capacitance of 1,167pF.

Single FETs, MOSFETs Feature Summary

Qualified to AEC-Q101 standards for high reliability in automotive applications
Designed to minimize on-state resistance while maintaining superior switching performance
Totally lead-free and fully RoHS compliant, halogen and antimony free

Single FETs, MOSFETs Applications

Power management functions
Battery operated systems
Solid-state relays
Drivers for relays, solenoids, lamps, hammers, displays, memories, and transistors

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix when purchasing. The datasheet lists DMN10H170SVTQ-7 (3,000/Tape & Reel) and DMN10H170SVTQ-13 (10,000/Tape & Reel). Confirm that the requested quantity matches the available reel packaging options provided by the manufacturer or distributor.

Single FETs, MOSFETs Selection Notes

Select this component for high-efficiency power management where low on-resistance and fast switching are required. Ensure the application voltage does not exceed the 100V drain-source rating. Consider the thermal resistance values (RθJA of 101°C/W on FR-4) for heat dissipation requirements in the target circuit design.

Single FETs, MOSFETs Part Context

This part belongs to the DMN10 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed as a new generation product intended to balance low static conduction losses with dynamic switching efficiency, targeting compact power solutions in consumer and automotive electronics.