DMN10H220LFVW-13

$0.12

Description：MOSFET BVDSS: 61V~100V POWERDI33
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:c2cc78fb0bda Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN10H220LFVW-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET BVDSS: 61V~100V POWERDI33. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN10H220LFVW-13

Description：MOSFET BVDSS: 61V~100V POWERDI33
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：222mOhm @ 2A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：6.7 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：366 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：2.4W (Ta), 41W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI3333-8 (SWP) Type UX
Package / Case：8-PowerVDFN

Single FETs, MOSFETs datasheet and documents for DMN10H220LFVW-13

DMN10H220LFVW-13

Single FETs, MOSFETs Overview

The DMN10H220LFVW-13 is a 100V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes the PowerDI3333-8 (SWP) package with wettable flank technology. The device features a maximum drain-source voltage of 100V and a continuous drain current of 11A at +25°C case temperature. Static drain-source on-resistance is specified as 222mΩ max at VGS=10V and 270mΩ max at VGS=4.5V. Total gate charge is 6.7nC at VGS=10V, supporting fast switching applications.

Single FETs, MOSFETs Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management.
Features wettable flank construction to facilitate improved optical inspections during assembly.
Verified for 100% unclamped inductive switching (UIS) capability in production testing.

Single FETs, MOSFETs Applications

Load Switch
High-efficiency power management

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging quantity and reel specifications. Confirm that the component meets required environmental standards such as RoHS compliance and halogen-free status before finalizing procurement. Ensure the selected variant matches the intended thermal and electrical requirements for the target application design.

Single FETs, MOSFETs Selection Notes

Select this component when a compact surface-mount solution is required for 100V switching applications. The PowerDI3333-8 package offers a balance of low thermal resistance and small footprint. Consider the on-resistance values at different gate voltages to ensure compatibility with available drive circuitry and efficiency targets.

Single FETs, MOSFETs Part Context

This part belongs to the DMN series of N-channel MOSFETs from Diodes Incorporated. These devices are engineered for general-purpose switching and power management tasks. The series emphasizes low on-resistance and robust switching characteristics within compact plastic packages suitable for automated surface-mount assembly processes.