DMN10H220LK3-13

$0.60

Description：MOSFET N-CH 100V 7.5A TO252
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:23ef62e28625 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN10H220LK3-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 100V 7.5A TO252. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN10H220LK3-13

Description：MOSFET N-CH 100V 7.5A TO252
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：220mOhm @ 2A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：6.7 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：384 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：18.7W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252 (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for DMN10H220LK3-13

DMN10H220LK3-13

Single FETs, MOSFETs Overview

The DMN10H220LK3-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (V_DSS) of 100 V and a continuous drain current (I_D) of 7.5 A at +25°C case temperature. The maximum on-resistance (R_DS(ON)) is 220 mΩ at V_GS = 10 V and 250 mΩ at V_GS = 4.5 V. The device operates within a junction temperature range of -55°C to +150°C, with a total power dissipation of 18.7 W at +25°C case temperature.

Single FETs, MOSFETs Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency applications.
Features low input capacitance and fast switching speed characteristics.
Compliant with RoHS directives and halogen/antimony-free green standards.

Single FETs, MOSFETs Applications

Load Switch
High-efficiency power management

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2,500 units per tape and reel packaging configuration. Confirm that the component meets the required environmental standards, specifically EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2), and 2015/863/EU (RoHS 3). Ensure the TO252 (DPAK) package dimensions align with the target PCB footprint layout requirements.

Single FETs, MOSFETs Selection Notes

Select this component when a 100 V rating and 7.5 A continuous current capability are required in a surface-mount DPAK package. Consider the thermal resistance values (RθJA of 92 °C/W and RθJC of 6.7 °C/W) for adequate heatsinking or board copper area planning. Evaluate the gate threshold voltage range (1 V to 2.5 V) against the driving logic levels to ensure reliable turn-on under expected operating conditions.

Single FETs, MOSFETs Part Context

This part belongs to the DMN10 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. These devices utilize silicon technology and are housed in a TO252 (DPAK) case constructed from molded plastic with a UL 94V-0 flammability rating. The terminals are finished with matte tin annealed over a copper leadframe, ensuring solderability per MIL-STD-202 Method 208.