DMN10H220LVT-7

$0.54

Description：MOSFET N-CH 100V 1.87A TSOT26
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:5940f4dc3720 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN10H220LVT-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 100V 1.87A TSOT26. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN10H220LVT-7

Description：MOSFET N-CH 100V 1.87A TSOT26
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：1.87A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：220mOhm @ 1.6A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：8.3 nC @ 10 V
Vgs (Max)：±16V
Input Capacitance (Ciss) (Max) @ Vds：401 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1.67W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TSOT-26
Package / Case：SOT-23-6 Thin, TSOT-23-6

Single FETs, MOSFETs datasheet and documents for DMN10H220LVT-7

DMN10H220LVT-7

Single FETs, MOSFETs Overview

The DMN10H220LVT-7 is a 100V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source on-resistance of 220mΩ at VGS=10V and 250mΩ at VGS=4.5V, with continuous drain currents of 2.24A and 1.87A respectively at +25°C. The device utilizes a TSOT26 surface-mount package and operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Designed for high efficiency power management applications through minimized on-state resistance and superior switching performance.
Totally lead-free and fully RoHS compliant, ensuring compliance with environmental directives.

Single FETs, MOSFETs Applications

DC-DC Converters
Power Management Functions
Backlighting

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix when purchasing. The suffix '-7' indicates a tape and reel packaging format containing 3,000 units per reel. Confirm that the required component matches this exact quantity configuration before finalizing procurement orders to ensure compatibility with automated assembly equipment.

Single FETs, MOSFETs Selection Notes

Select this component for circuits requiring a 100V breakdown voltage in a compact TSOT26 footprint. Evaluate thermal constraints carefully, as the device relies on FR-4 substrate copper area for heat dissipation. Ensure gate drive voltages align with the specified thresholds for optimal RDS(on) performance.

Single FETs, MOSFETs Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It represents a generation of devices engineered to balance low conduction losses with fast switching speeds, targeting modern portable electronics and power supply designs where space and efficiency are critical.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other DMN series parts such as DMN10H220LFGQ-7 or DMN10H220SFGQ-7 if different packaging options like cut tape or PowerDI packages are required. Verify pinout compatibility and thermal characteristics before substituting.