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Product Detailed Parameters
- Description：MOSFET 2N-CH 100V 0.27A 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：100V
- Current - Continuous Drain (Id) @ 25°C：270mA (Ta)
- Rds On (Max) @ Id, Vgs：6Ohm @ 190mA, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：1.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：41pF @ 50V
- Power - Max：700mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-UDFN Exposed Pad
- Supplier Device Package：U-DFN2020-6 (Type B)
- Grade：-
- Qualification：-
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Overview
The DMN10H6D2LFDB-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 100V drain-source breakdown voltage and a maximum continuous drain current of 0.27A at +25°C. The device offers a low on-state resistance of 6Ω at VGS=10V and 10Ω at VGS=4.5V. Packaged in a U-DFN2020-6 (Type B) case, it operates within a temperature range of -55°C to +150°C. The component is supplied in tape and reel packaging with a quantity of 10,000 units per reel.
Feature Summary
- Dual N-channel configuration for compact power management designs
- Low gate threshold voltage enabling efficient drive requirements
- Fast switching speed supported by low input capacitance
- ESD protection rated up to 1kV
Applications
- Small servo motor control
- Power MOSFET gate drivers
- General switching applications
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging format when sourcing components. Confirm that the U-DFN2020-6 package dimensions align with the target PCB footprint layout. Ensure compliance with RoHS and halogen-free material requirements if mandated by the end-product specifications.
Selection Notes
Select this component for applications requiring a dual N-channel MOSFET in a small form factor. Evaluate the 6Ω RDS(ON) specification against the required load current to ensure thermal limits are not exceeded. Consider the 100V rating for systems operating below this threshold. Verify that the 0.27A continuous current capability meets the peak and steady-state demands of the intended circuit design.
Part Context
This part belongs to the DMN series of dual N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes the U-DFN2020-6 package to provide a compact solution for space-constrained designs. The series focuses on minimizing on-state resistance while maintaining fast switching performance for high-efficiency power management tasks.
Replacement Considerations
Check for alternative dual N-channel MOSFETs in the U-DFN2020-6 package with comparable 100V ratings and similar RDS(ON) values. Verify pinout compatibility and thermal characteristics before substitution.
