DMN10H6D2LFDB-7

Overview

The DMN10H6D2LFDB-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a U-DFN2020-6 package and operates with a drain-source voltage (VDSS) of 100V. The device provides a maximum continuous drain current (ID) of 0.27A at +25°C, dropping to 0.22A at +70°C. Static drain-source on-resistance (RDS(ON)) is rated at a maximum of 6Ω at VGS = 10V and 10Ω at VGS = 4.5V. Total gate charge (Qg) is 1.2nC at VGS = 10V. Thermal resistance from junction to ambient is 178°C/W under steady-state conditions.

Feature Summary

• Dual N-channel configuration for compact power management
• Low gate threshold voltage for efficient switching
• ESD protection up to 1kV
• Totally lead-free and fully RoHS compliant

Applications

• Small servo motor control
• Power MOSFET gate drivers
• General switching applications

Procurement Notes

Verify the specific ordering suffix when purchasing. The -7 suffix indicates a 3,000-unit tape and reel packaging format, while the -13 suffix denotes a 10,000-unit tape and reel. Confirm that the required quantity aligns with these standard factory packaging sizes before placing orders.

Selection Notes

Select this component for designs requiring a dual N-channel MOSFET in a highly compact U-DFN2020-6 footprint. Ensure the application current does not exceed the 0.27A limit at +25°C or the 0.22A limit at +70°C. Verify that the gate drive voltage meets the requirements for the desired RDS(ON) performance level.

Part Context

This part belongs to the DMN series of dual N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes the PowerDI family's U-DFN2020-6 case style, designed to minimize on-state resistance while maintaining fast switching speeds for high-efficiency power management systems.

Replacement Considerations

The DMN10H6D2LFDB-13 serves as a direct functional substitute, differing only in its 10,000-unit tape and reel packaging format compared to the 3,000-unit format of the -7 variant.