DMN1150UFL3-7

DMN1150UFL3-7

$0.24
  • Description:MOSFET 2N-CH 12V 2A 6DFN
  • Series:-

SKU:0706c2acf572 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 12V 2A 6DFN
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):12V
  • Current - Continuous Drain (Id) @ 25°C:2A
  • Rds On (Max) @ Id, Vgs:150mOhm @ 1A, 4.5V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:1.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:115pF @ 6V
  • Power - Max:390mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-XFDFN Exposed Pad
  • Supplier Device Package:X2-DFN1310-6 (Type B)
  • Grade:Automotive
  • Qualification:AEC-Q101

Download product information

DMN1150UFL3-7

Overview

The DMN1150UFL3-7 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, housed in an X2-DFN1310-6 (Type B) surface-mount package. It features a 12V drain-source voltage rating and a maximum continuous drain current of 2.0A at +25°C. The device achieves a low on-state resistance of 150mΩ at VGS = 4.5V and 185mΩ at VGS = 2.5V. Operating within a temperature range of -55°C to +150°C, it includes integrated gate protection diodes for each channel.

Feature Summary

  • Dual configuration with two independent N-channel MOSFETs in a single ultra-small footprint
  • Ultra-low profile package design measuring 0.35mm in height
  • Integrated ESD protection diodes on the gates of both channels
  • Qualified to AEC-Q101 standards for high reliability applications

Applications

  • Motor control circuits
  • Power management functions
  • Backlighting systems

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the standard 3,000-unit reel quantity as documented in the manufacturer's ordering information. Confirm that the component meets RoHS compliance and halogen-free requirements if environmental regulations apply to the assembly process. Ensure the procurement source provides valid traceability documentation for the AEC-Q101 qualification status.

Selection Notes

Select this component when space constraints require a footprint of only 1.3 mm² for dual switching applications. Evaluate the thermal resistance values based on the specific PCB copper area available, as power dissipation capabilities vary significantly between minimum pad layouts and larger heat-sinking configurations. Consider the low gate threshold voltage for compatibility with low-voltage logic drivers.

Part Context

This part belongs to the DMN series of dual MOSFETs designed by Diodes Incorporated. It utilizes the X2-DFN1310-6 package type, which is distinct from other DFN variants due to its specific dimensional tolerances and leadframe finish. The product line focuses on minimizing on-state resistance while maintaining fast switching speeds for efficient power management.

Replacement Considerations

No public substitute part numbers are documented in the provided datasheet.

DMN1150UFL3-7DMN1150UFL3-7
$0.24
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