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The DMN1150UFL3-7 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, housed in an X2-DFN1310-6 (Type B) surface-mount package. It features a 12V drain-source voltage rating and a maximum continuous drain current of 2.0A at +25°C. The device achieves a low on-state resistance of 150mΩ at VGS = 4.5V and 185mΩ at VGS = 2.5V. Operating within a temperature range of -55°C to +150°C, it includes integrated gate protection diodes for each channel.
Verify the specific ordering suffix '-7' corresponds to the standard 3,000-unit reel quantity as documented in the manufacturer's ordering information. Confirm that the component meets RoHS compliance and halogen-free requirements if environmental regulations apply to the assembly process. Ensure the procurement source provides valid traceability documentation for the AEC-Q101 qualification status.
Select this component when space constraints require a footprint of only 1.3 mm² for dual switching applications. Evaluate the thermal resistance values based on the specific PCB copper area available, as power dissipation capabilities vary significantly between minimum pad layouts and larger heat-sinking configurations. Consider the low gate threshold voltage for compatibility with low-voltage logic drivers.
This part belongs to the DMN series of dual MOSFETs designed by Diodes Incorporated. It utilizes the X2-DFN1310-6 package type, which is distinct from other DFN variants due to its specific dimensional tolerances and leadframe finish. The product line focuses on minimizing on-state resistance while maintaining fast switching speeds for efficient power management.
No public substitute part numbers are documented in the provided datasheet.