DMN12M3UCA6-7

Overview

The DMN12M3UCA6-7 is an N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a compact X4-DSN3118-6 package. It features a source-source breakdown voltage (BVSSS) of 14.5 V and a maximum continuous source current of 24.4 A at +25°C with VGS = 4.5V. The typical static source-source on-resistance (RSS(ON)) is 2.36 mΩ at VGS = 3.8V and IS = 6A. Key dynamic parameters include a total gate charge (Qg) of 45.7 nC and an input capacitance (Ciss) of 3062 pF. The device operates within a temperature range of -55°C to +150°C.

Feature Summary

• Ultra-low profile height of 0.11mm for space-constrained designs
• Integrated ESD protection for the gate terminal
• Totally lead-free and fully RoHS compliant construction

Applications

• Battery management systems
• Load switching circuits
• Battery protection modules

Procurement Notes

Verify the component authenticity by checking the marking code against the official date code key provided in the datasheet. Confirm that the packaging matches the specified tape and reel format for the -7 suffix. Ensure compliance with environmental directives such as RoHS 3 and halogen-free requirements during procurement.

Selection Notes

Select this component when low on-state resistance is critical for high-efficiency power management. Consider the 14V voltage rating and 24.4A current capability relative to the application load. Evaluate the thermal performance using the junction-to-ambient resistance values provided for different mounting conditions.

Part Context

This part belongs to the DMN series of N-channel MOSFETs designed for minimizing RSS(ON) while maintaining superior switching performance. It utilizes the X4-DSN3118-6 case style, which provides a footprint of 3.05mm x 1.77mm. The series targets high-efficiency applications requiring compact form factors.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.