DMN12M7UCA10-7

$1.13

Description：MOSFET 2N-CH 20.2A X4-DSN3015-10
Series：-

SKU:a59a9b35a5de Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 20.2A X4-DSN3015-10
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：20.2A (Ta)
Rds On (Max) @ Id, Vgs：2.75mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id：1.4V @ 1.11mA
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：10-SMD, No Lead
Supplier Device Package：X4-DSN3015-10
Grade：-
Qualification：-

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DMN12M7UCA10-7

Overview

The DMN12M7UCA10-7 is an N-channel enhancement mode MOSFET from Diodes Incorporated, housed in an X4-DSN3015-10 package. It features a source-source breakdown voltage of 12V and a maximum continuous source current of 20.2A at +25°C. The typical on-resistance (RSS(ON)) is 2.3mΩ at VGS=3.8V. Operating temperature ranges from -55°C to +150°C.

Feature Summary

Ultra-low profile height of 0.11mm for space-constrained designs
Integrated ESD protection for the gate terminal
Totally lead-free and fully RoHS compliant construction

Applications

Battery management systems
Load switching circuits
Battery protection modules

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 5000-unit tape and reel packaging configuration. Confirm that the component meets AEC-Q100/101/200 standards if automotive qualification is required for your application environment.

Selection Notes

Select this component when low on-state resistance is critical for high-efficiency power management. Ensure the design accommodates the 12V breakdown limit and utilizes the recommended FR-4 PCB pad layout to achieve optimal thermal dissipation characteristics.

Part Context

This device belongs to the DMN series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It represents a newer generation designed to minimize conduction loss while maintaining superior switching performance compared to previous iterations.