DMN13H750S-7

$0.41

Description：MOSFET N-CH 130V 1A SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:0f478dfeb969 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN13H750S-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 130V 1A SOT23. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN13H750S-7

Description：MOSFET N-CH 130V 1A SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：130 V
Current - Continuous Drain (Id) @ 25°C：1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：750mOhm @ 2A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：5.6 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：231 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：770mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for DMN13H750S-7

DMN13H750S-7

Single FETs, MOSFETs Overview

The DMN13H750S is a 130V N-channel enhancement mode MOSFET in an SOT-23 package. It features a drain-source breakdown voltage of 130V and a gate-source voltage rating of ±20V. The device provides a continuous drain current of 1.0A at +25°C and a pulsed drain current of 3.3A. Static drain-source on-resistance is specified as 0.75Ω max at VGS=10V and 0.85Ω max at VGS=6.0V, both tested at ID=2.0A. Total gate charge is typically 5.6nC at VDS=104V and VGS=10V. Operating junction temperature ranges from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Designed for high efficiency power management applications with minimized on-state resistance.
Maintains superior switching performance alongside low input capacitance.
Qualified to AEC-Q101 standards for high reliability automotive applications.
Totally lead-free and fully RoHS compliant.

Single FETs, MOSFETs Applications

DC-DC Converters
Power Management Functions
Battery Operated Systems
Solid-State Relays
Drivers for Relays, Solenoids, Lamps, Hammers, Displays, Memories

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix when purchasing. The suffix '-7' indicates a tape and reel quantity of 3,000 units, while '-13' indicates a quantity of 10,000 units. Confirm that the required packaging matches the intended manufacturing process before placing orders. Ensure compliance with environmental directives such as RoHS 2 if applicable to the final assembly requirements.

Single FETs, MOSFETs Selection Notes

Select this component for circuits requiring a 130V blocking capability within a compact SOT-23 footprint. The low gate threshold voltage supports efficient drive logic. Evaluate thermal constraints carefully, as steady-state power dissipation is limited to 0.77W on standard FR-4 substrates. Consider the 0.75Ω on-resistance for conduction loss calculations in low-current DC-DC converter designs.

Single FETs, MOSFETs Part Context

This part belongs to Diodes Incorporated's DMN series of N-channel enhancement mode MOSFETs. These devices are engineered to balance low on-resistance with fast switching speeds. The series targets general-purpose power management tasks where space is constrained but moderate voltage ratings are necessary.

Single FETs, MOSFETs Replacement Considerations

Check datasheets for alternative parts offering compatible 130V ratings and similar RDS(ON) values. Verify pinout alignment (Drain, Gate, Source) and package dimensions to ensure mechanical fit. Confirm that replacement components meet the same AEC-Q101 qualification standards if used in automotive contexts.